MJE340 - описание и поиск аналогов

 

Аналоги MJE340. Основные параметры


   Наименование производителя: MJE340
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO126

 Аналоги (замена) для MJE340

   - подбор ⓘ биполярного транзистора по параметрам

 

MJE340 даташит

 ..1. Size:594K  st
mje340 mje350.pdfpdf_icon

MJE340

MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment 3 2 1 Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complemen

 ..2. Size:37K  fairchild semi
mje340.pdfpdf_icon

MJE340

MJE340 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO

 ..3. Size:238K  cdil
mje340.pdfpdf_icon

MJE340

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340 TO126 Plastic Package E C B For use in High Voltage General Purpose Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 300 V Collector Base Voltage VCBO 300 V VEBO Emitter Base Voltage 3.0 V IC C

 ..4. Size:212K  inchange semiconductor
mje340.pdfpdf_icon

MJE340

isc Silicon NPN Power Transistor MJE340 DESCRIPTION Collector Emitter Sustaining Voltage- V = 300 V(Min) CEO(SUS) DC Current Gain- h = 100(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 50mA CE(sat) C Complement to the PNP MJE350 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

Другие транзисторы... MJE3311 , MJE3312 , MJE3370 , MJE3371 , MJE33A , MJE33B , MJE33C , MJE34 , 2SC5200 , MJE340K , MJE341 , MJE341K , MJE3439 , MJE344 , MJE3440 , MJE344K , MJE345 .

History: MUN5211

 

 
Back to Top

 


 
.