L2SB1197KRLT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L2SB1197KRLT1G  📄📄 

Código: AHR

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 32 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 180

Encapsulados: SOT23

  📄📄 Copiar 

 Búsqueda de reemplazo de L2SB1197KRLT1G

- Selecciónⓘ de transistores por parámetros

 

L2SB1197KRLT1G datasheet

 ..1. Size:117K  lrc
 l2sb1197krlt1g.pdf pdf_icon

L2SB1197KRLT1G

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. NPN complement L2SD1781K 1 We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 5.1. Size:113K  lrc
 l2sb1197kqlt1g.pdf pdf_icon

L2SB1197KRLT1G

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. 1 NPN complement L2SD1781K We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

Otros transistores... L2SA1774RT1G, L2SA1774ST1G, L2SA2029QM3T5G, L2SA2029RM3T5G, L2SA812QLT1G, L2SA812RLT1G, L2SA812SLT1G, L2SB1197KQLT1G, A940, L2SB772P, L2SB772Q, L2SC1623QLT1G, L2SC1623RLT1G, L2SC1623SLT1G, L2SC1623SWT1G, L2SC2411KQLT1G, L2SC2411KRLT1G