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L2SB1197KRLT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L2SB1197KRLT1G
   Código: AHR
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: SOT23

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L2SB1197KRLT1G Datasheet (PDF)

 ..1. Size:117K  lrc
 l2sb1197krlt1g.pdf pdf_icon

L2SB1197KRLT1G

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. NPN complement L2SD1781K 1 We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 5.1. Size:113K  lrc
 l2sb1197kqlt1g.pdf pdf_icon

L2SB1197KRLT1G

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. 1 NPN complement L2SD1781K We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

Otros transistores... L2SA1774RT1G , L2SA1774ST1G , L2SA2029QM3T5G , L2SA2029RM3T5G , L2SA812QLT1G , L2SA812RLT1G , L2SA812SLT1G , L2SB1197KQLT1G , A940 , L2SB772P , L2SB772Q , L2SC1623QLT1G , L2SC1623RLT1G , L2SC1623SLT1G , L2SC1623SWT1G , L2SC2411KQLT1G , L2SC2411KRLT1G .

History: 2SD1935 | 2SD158 | KZT4403 | DDTA143ECA | 2SD2670 | AC554 | KD4348

 

 
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