All Transistors. L2SB1197KRLT1G Datasheet

 

L2SB1197KRLT1G Datasheet and Replacement


   Type Designator: L2SB1197KRLT1G
   SMD Transistor Code: AHR
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT23
 

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L2SB1197KRLT1G Datasheet (PDF)

 ..1. Size:117K  lrc
 l2sb1197krlt1g.pdf pdf_icon

L2SB1197KRLT1G

LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type. NPN complement: L2SD1781K1 We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 5.1. Size:113K  lrc
 l2sb1197kqlt1g.pdf pdf_icon

L2SB1197KRLT1G

LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type.1 NPN complement: L2SD1781K We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site

Datasheet: L2SA1774RT1G , L2SA1774ST1G , L2SA2029QM3T5G , L2SA2029RM3T5G , L2SA812QLT1G , L2SA812RLT1G , L2SA812SLT1G , L2SB1197KQLT1G , B772 , L2SB772P , L2SB772Q , L2SC1623QLT1G , L2SC1623RLT1G , L2SC1623SLT1G , L2SC1623SWT1G , L2SC2411KQLT1G , L2SC2411KRLT1G .

History: ECG286 | CHDTC144GEGP | TIP141 | 2SD1753 | 3DD4804 | DCP69 | 2SC4262

Keywords - L2SB1197KRLT1G transistor datasheet

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