L2SA812SLT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2SA812SLT1G
Código: M7
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hfe): 270
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar L2SA812SLT1G
L2SA812SLT1G Datasheet (PDF)
l2sa812slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsFEATURE L2SA812QLT1G Series High Voltage: VCEO = -50 V.S-L2SA812QLT1G Series Epitaxial planar type. NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements. 3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi
l2sa812qlt1g l2sa812qlt3g l2sa812rlt1g l2sa812rlt3g l2sa812slt3g l2sa812slt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu
l2sa812qlt1g l2sa812rlt1g l2sa812slt3g l2sa812slt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu
l2sa812qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SA812QLT1G SeriesFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements. 3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifie
l2sa812rlt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
