All Transistors. L2SA812SLT1G Datasheet

 

L2SA812SLT1G Datasheet and Replacement


   Type Designator: L2SA812SLT1G
   SMD Transistor Code: M7
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 270
   Noise Figure, dB: -
   Package: SOT23

 L2SA812SLT1G Transistor Equivalent Substitute - Cross-Reference Search

   

L2SA812SLT1G Datasheet (PDF)

 ..1. Size:191K  lrc
 l2sa812slt1g.pdf pdf_icon

L2SA812SLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SA812QLT1G Series High Voltage VCEO = -50 V. S-L2SA812QLT1G Series Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi... See More ⇒

 ..2. Size:193K  lrc
 l2sa812qlt1g l2sa812qlt3g l2sa812rlt1g l2sa812rlt3g l2sa812slt3g l2sa812slt1g.pdf pdf_icon

L2SA812SLT1G

LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu... See More ⇒

 ..3. Size:193K  lrc
 l2sa812qlt1g l2sa812rlt1g l2sa812slt3g l2sa812slt1g.pdf pdf_icon

L2SA812SLT1G

LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu... See More ⇒

 7.1. Size:187K  lrc
 l2sa812qlt1g.pdf pdf_icon

L2SA812SLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifie... See More ⇒

SHOW MORE

Datasheet: L2SA1576AST1G , L2SA1774QT1G , L2SA1774RT1G , L2SA1774ST1G , L2SA2029QM3T5G , L2SA2029RM3T5G , L2SA812QLT1G , L2SA812RLT1G , 2SC1815 , L2SB1197KQLT1G , L2SB1197KRLT1G , L2SB772P , L2SB772Q , L2SC1623QLT1G , L2SC1623RLT1G , L2SC1623SLT1G , L2SC1623SWT1G .

History: CS2641 | CRYD918U | DK50 | MRF847 | DK151 | SUR496H | KTC4082

Keywords - L2SA812SLT1G transistor datasheet

 L2SA812SLT1G cross reference
 L2SA812SLT1G equivalent finder
 L2SA812SLT1G lookup
 L2SA812SLT1G substitution
 L2SA812SLT1G replacement

 

 
Back to Top

 


 
.