All Transistors. L2SB1197KQLT1G Datasheet

 

L2SB1197KQLT1G Datasheet, Equivalent, Cross Reference Search

Type Designator: L2SB1197KQLT1G

SMD Transistor Code: AHQ

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

L2SB1197KQLT1G Transistor Equivalent Substitute - Cross-Reference Search

 

L2SB1197KQLT1G Datasheet (PDF)

1.1. l2sb1197krlt1g.pdf Size:117K _lrc

L2SB1197KQLT1G
L2SB1197KQLT1G

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. NPN complement: L2SD1781K 1 We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

1.2. l2sb1197kqlt1g.pdf Size:113K _lrc

L2SB1197KQLT1G
L2SB1197KQLT1G

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. 1 NPN complement: L2SD1781K We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

Datasheet: L2SA1774QT1G , L2SA1774RT1G , L2SA1774ST1G , L2SA2029QM3T5G , L2SA2029RM3T5G , L2SA812QLT1G , L2SA812RLT1G , L2SA812SLT1G , S9013 , L2SB1197KRLT1G , L2SB772P , L2SB772Q , L2SC1623QLT1G , L2SC1623RLT1G , L2SC1623SLT1G , L2SC1623SWT1G , L2SC2411KQLT1G .

 


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