L2SB1197KQLT1G Datasheet. Specs and Replacement
Type Designator: L2SB1197KQLT1G 📄📄
SMD Transistor Code: AHQ
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT23
L2SB1197KQLT1G Substitution
- BJT ⓘ Cross-Reference Search
L2SB1197KQLT1G datasheet
LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. 1 NPN complement L2SD1781K We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site ... See More ⇒
LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. NPN complement L2SD1781K 1 We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site ... See More ⇒
Detailed specifications: L2SA1774QT1G, L2SA1774RT1G, L2SA1774ST1G, L2SA2029QM3T5G, L2SA2029RM3T5G, L2SA812QLT1G, L2SA812RLT1G, L2SA812SLT1G, BD335, L2SB1197KRLT1G, L2SB772P, L2SB772Q, L2SC1623QLT1G, L2SC1623RLT1G, L2SC1623SLT1G, L2SC1623SWT1G, L2SC2411KQLT1G
Keywords - L2SB1197KQLT1G pdf specs
L2SB1197KQLT1G cross reference
L2SB1197KQLT1G equivalent finder
L2SB1197KQLT1G pdf lookup
L2SB1197KQLT1G substitution
L2SB1197KQLT1G replacement
