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L2SD882Q Specs and Replacement


   Type Designator: L2SD882Q
   SMD Transistor Code: 82Q
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89

 L2SD882Q Transistor Equivalent Substitute - Cross-Reference Search

   

L2SD882Q detailed specifications

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L2SD882Q

LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB882Q L2SB882P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB882Q 82Q 2500/Tape&Reel 2,4 L2SB882P 82P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25 C) BASE Parameter Symbol Limits Unit 3 Collector-bas... See More ⇒

Detailed specifications: L2SC4617ST1G , L2SC5635WT1G , L2SC5658QM3T5G , L2SC5658RM3T5G , L2SD1781KRLT1G , L2SD2114KVLT1G , L2SD2114KWLT1G , L2SD882P , BC639 , L8050HPLT1G , L8050HQLT1G , L8050HRLT1G , L8050PLT1G , L8050QLT1G , L8550HPLT1G , L8550HQLT1G , L8550HRLT1G .

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