L9013QLT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: L9013QLT1G
SMD Transistor Code: 13Q
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: SOT23
L9013QLT1G Transistor Equivalent Substitute - Cross-Reference Search
L9013QLT1G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh
l9013plt1g l9013qlt1g l9013rlt1g l9013slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9013qlt1g.pdf
L9013QLT1GS-L9013QLT1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh
l9013plt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9013.pdf
LESHAN RADIO COMPANY, LTD.NPN Epitaxial Silicon L9013Transistor1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to L9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol
l9013rlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh
l9013slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Site S-L9013PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
