All Transistors. LBC848ALT1G Datasheet

 

LBC848ALT1G Datasheet and Replacement


   Type Designator: LBC848ALT1G
   SMD Transistor Code: 1J
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: SOT23
 

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LBC848ALT1G Datasheet (PDF)

 ..1. Size:402K  lrc
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LBC848ALT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 ..2. Size:402K  lrc
lbc848alt1g.pdf pdf_icon

LBC848ALT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 ..3. Size:402K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g lbc847clt3g lbc848alt1g lbc848alt3g.pdf pdf_icon

LBC848ALT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 ..4. Size:404K  lrc
lbc847clt3g lbc848alt1g lbc848alt3g lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g.pdf pdf_icon

LBC848ALT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

Datasheet: LBC847BDW1T1G , LBC847BLT1G , LBC847BPDW1T1G , LBC847BTT1G , LBC847BWT1G , LBC847CDW1T1G , LBC847CLT1G , LBC847CWT1G , 2SC4793 , LBC848BDW1T1G , LBC848BLT1G , LBC848BPDW1T1G , LBC848BWT1G , LBC848CDW1T1G , LBC848CLT1G , LBC848CPDW1T1G , LBC848CWT1G .

History: LBSS4350SY3T1G | MMUN2136LT1G | BLX68 | 2SC2544 | DTA144WA3 | CMPT4403

Keywords - LBC848ALT1G transistor datasheet

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