All Transistors. LH8050QLT1G Datasheet

 

LH8050QLT1G Datasheet and Replacement


   Type Designator: LH8050QLT1G
   SMD Transistor Code: KEY
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT23
 

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LH8050QLT1G Datasheet (PDF)

 ..1. Size:211K  lrc
 lh8050qlt1g.pdf pdf_icon

LH8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE Series High current capacity in compact package.IC =1.5A.3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2Control Change Requirements; AEC-Q101 Qualified and

 ..2. Size:211K  lrc
 lh8050plt1g lh8050plt3g lh8050qlt1g lh8050qlt3g.pdf pdf_icon

LH8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE Series High current capacity in compact package.IC =1.5A.3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2Control Change Requirements; AEC-Q101 Qualified and

 ..3. Size:211K  lrc
 lh8050plt1g lh8050qlt1g.pdf pdf_icon

LH8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE Series High current capacity in compact package.IC =1.5A.3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2Control Change Requirements; AEC-Q101 Qualified and

 8.1. Size:237K  lrc
 lh8050plt1g.pdf pdf_icon

LH8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE High current capacity in compact package.SeriesIC =1.5A. Epitaxial planar type. NPN complement: LH80503 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1Control Change Requirements; AEC-Q101 Qualified and PP

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Datasheet: LBC848CPDW1T1G , LBC848CWT1G , LBC850BLT1G , LBC850BWT1G , LBC850CLT1G , LX8050QLT1G , LBSS4240LT1G , LBSS5240LT1G , 9014 , LH8550QLT1G , LMBTH10LT1G , LMBTH10QLT1G , LMBTH10WT1G , LBC856ALT1G , LBC856BDW1T1G , LBC856BLT1G , LBC856BWT1G .

History: LH8550QLT1G | 2N961-46 | 2N4926S | BC857A | LBC856BDW1T1G | BC856ALT1 | BC850B

Keywords - LH8050QLT1G transistor datasheet

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