LH8050QLT1G PDF and Equivalents Search

 

LH8050QLT1G Specs and Replacement

Type Designator: LH8050QLT1G

SMD Transistor Code: KEY

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT23

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LH8050QLT1G datasheet

 ..1. Size:211K  lrc

lh8050qlt1g.pdf pdf_icon

LH8050QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and ... See More ⇒

 ..2. Size:211K  lrc

lh8050plt1g lh8050plt3g lh8050qlt1g lh8050qlt3g.pdf pdf_icon

LH8050QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and ... See More ⇒

 ..3. Size:211K  lrc

lh8050plt1g lh8050qlt1g.pdf pdf_icon

LH8050QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and ... See More ⇒

 8.1. Size:237K  lrc

lh8050plt1g.pdf pdf_icon

LH8050QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE High current capacity in compact package. Series IC =1.5A. Epitaxial planar type. NPN complement LH8050 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PP... See More ⇒

Detailed specifications: LBC848CPDW1T1G , LBC848CWT1G , LBC850BLT1G , LBC850BWT1G , LBC850CLT1G , LX8050QLT1G , LBSS4240LT1G , LBSS5240LT1G , BC558 , LH8550QLT1G , LMBTH10LT1G , LMBTH10QLT1G , LMBTH10WT1G , LBC856ALT1G , LBC856BDW1T1G , LBC856BLT1G , LBC856BWT1G .

History: 2SC3585A | MPSW45G | 3DG8050A | 3DG8

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History: 2SC3585A | MPSW45G | 3DG8050A | 3DG8

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