All Transistors. LH8050QLT1G Datasheet

 

LH8050QLT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LH8050QLT1G
   SMD Transistor Code: KEY
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT23

 LH8050QLT1G Transistor Equivalent Substitute - Cross-Reference Search

   

LH8050QLT1G Datasheet (PDF)

 ..1. Size:211K  lrc
lh8050qlt1g.pdf

LH8050QLT1G
LH8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE Series High current capacity in compact package.IC =1.5A.3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2Control Change Requirements; AEC-Q101 Qualified and

 ..2. Size:211K  lrc
lh8050plt1g lh8050plt3g lh8050qlt1g lh8050qlt3g.pdf

LH8050QLT1G
LH8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE Series High current capacity in compact package.IC =1.5A.3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2Control Change Requirements; AEC-Q101 Qualified and

 ..3. Size:211K  lrc
lh8050plt1g lh8050qlt1g.pdf

LH8050QLT1G
LH8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE Series High current capacity in compact package.IC =1.5A.3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2Control Change Requirements; AEC-Q101 Qualified and

 8.1. Size:237K  lrc
lh8050plt1g.pdf

LH8050QLT1G
LH8050QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE High current capacity in compact package.SeriesIC =1.5A. Epitaxial planar type. NPN complement: LH80503 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1Control Change Requirements; AEC-Q101 Qualified and PP

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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