All Transistors. LMBT5541DW1T1G Datasheet

 

LMBT5541DW1T1G Datasheet and Replacement


   Type Designator: LMBT5541DW1T1G
   SMD Transistor Code: GL
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC88
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LMBT5541DW1T1G Datasheet (PDF)

 ..1. Size:281K  lrc
 lmbt5541dw1t1g.pdf pdf_icon

LMBT5541DW1T1G

LESHAN RADIO COMPANY, LTD.DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5541DW1T1GS-LMBT5541DW1T1GFEATURE We declare that the material of product is ROHS compliant and halogen free. 65 4S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERING INFORMATIO

 ..2. Size:281K  lrc
 lmbt5541dw1t1g lmbt5541dw1t3g.pdf pdf_icon

LMBT5541DW1T1G

LESHAN RADIO COMPANY, LTD.DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5541DW1T1GS-LMBT5541DW1T1GFEATURE We declare that the material of product is ROHS compliant and halogen free. 65 4S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERING INFORMATIO

 8.1. Size:135K  lrc
 lmbt5551dw1t1g.pdf pdf_icon

LMBT5541DW1T1G

LESHAN RADIO COMPANY, LTD.DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5551DW1T1GFEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.6DEVICE MARKING AND ORDERING INFORMATION54De

 8.2. Size:166K  lrc
 lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5541DW1T1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N1728 | 2N89 | 2N2082A | 2N601 | 2N5384 | 2N380 | 2N5015S

Keywords - LMBT5541DW1T1G transistor datasheet

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