LMBT918LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LMBT918LT1G
SMD Transistor Code: M3B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT23
LMBT918LT1G Transistor Equivalent Substitute - Cross-Reference Search
LMBT918LT1G Datasheet (PDF)
..1. Size:75K lrc
lmbt918lt1g.pdf
lmbt918lt1g.pdf
LESHAN RADIO COMPANY, LTD.VHF / UFH TransistorNPN Silicon We declare that the material of product compliance with RoHS requirements.LMBT918LT1GS-LMBT918LT1GOrdering InformationDevice Marking ShippingLMBT918LT1G3000/Tape&ReelM3BS-LMBT918LT1G3LMBT918LT3GM3B 10000/Tape&ReelS-LMBT918LT3G12MAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value UnitSOT
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
