LNST3906F3T5G Datasheet and Replacement
Type Designator: LNST3906F3T5G
SMD Transistor Code: 3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.29 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT1123
LNST3906F3T5G Datasheet (PDF)
lnst3906f3t5g.pdf

LESHAN RADIO COMPANY, LTD.PNP General PurposeTransistorLNST3906F3T5GS-LNST3906F3T5GTheLNST3906F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inCOLLECTORthe SOT-1123 surface mount package. This device is ideal for3low-power surface mount applications where bo
lnst3904f3t5g.pdf

LESHAN RADIO COMPANY, LTD.NPN General PurposeTransistorLNST3904F3T5GThe LNST3904F3T5G device is a spin-off of our popularS-LNST3904F3T5GSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inthe SOT-1123 surface mount package. This device is ideal forCOLLECTORlow-power surface mount applications where boar
Datasheet: LMBT4401DW1T1G , LMBT4401LT1G , LMBT4401WT1G , LMBT4403DW1T1G , LMBT4403LT1G , LMBT4403WT1G , LMBT4413DW1T1G , LNST3904F3T5G , A1941 , S8050LT1 , S8550LT1 , S9018LT1 , 2SC9013 , 2N2222AE , 2N2222AS , 2N2222AU , 2N2907AS .
History: MUN5333DW | 2SD882SQ-P
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History: MUN5333DW | 2SD882SQ-P



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