FTB1184 Datasheet and Replacement

SEMICONDUCTORFTB1184TECHNICAL DATAFTB1184 TRANSISTOR (PNP) AICFEATURES JLow VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the FTD1760 DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2Symbol Parameter Value Unit F 2 30 0 1HH 1 00 MAXVCBO Collector Bas

SEMICONDUCTORFTB1197KTECHNICAL DATALow Frequency TransistorPNP SiliconFEATURE 3High current capacity in compact package.2IC = 0.8A.Epitaxial planar type. 1NPN complement: FTB1781K SOT 23 We declare that the material of product compliance with RoHS requirements.DEVICE MARKING AND ORDERING INFORMATION Marking Shipping Device3 FTB1197KQLT1G AHQ 3000/Tape&Reel

SEMICONDUCTORFTB1116ATECHNICAL DATAGe e u po e s oPNP Silicon B CFEATURES * High Collector Power Dissipation* Complementary NPN Type available (FTD1616A)DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXMAXIMUM RATINGS (TA=25 unless otherwise noted) E 1.00Parameter Value Units F 1.27Symbol G 0.85H 0.45VCBO Collector-Base Voltage -80 V

SEMICONDUCTORFTB1151TECHNICAL DATADFTB1151 TRANSISTOR (PNP) EA CFEATURES F GDIM MILLIMETERSBA 8.3 MAX Low Collector-Emitter Saturation Voltage B 11.30.3C 4.15 TYP1 2 3 Large Collector Current D 3.20.2E 2.00.2 High Power Dissipation H F 2.80.1IG 3.20.1 Complement to FTD1691 H 1.270.1KI 1.400.115.50.2KL 0.760.1M 2.28 TYP