All Transistors. FTB1260 Datasheet

 

FTB1260 Datasheet and Replacement


   Type Designator: FTB1260
   SMD Transistor Code: ZL
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: SOT89
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FTB1260 Datasheet (PDF)

 ..1. Size:100K  first silicon
 ftb1260.pdf pdf_icon

FTB1260

SEMICONDUCTORFTB1260TECHNICAL DATAACHFTB1260 TRANSISTOR (PNP) GFEATURES DD Power Transistor KF F High Voltage and Current DIM MILLIMETERSA 4.70 MAX_+ Low Collector-emitter saturation voltage B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10 Complements the FTD1898 E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3.

 8.1. Size:406K  first silicon
 ftb1261.pdf pdf_icon

FTB1260

SEMICONDUCTORFTB1261TECHNICAL DATAFTB1261 TRANSISTOR (PNP) AICJFEATURES Low VCE(sat) High DC Current Gain DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HMAXIMUM RATINGS (Ta=25 unless otherwise noted) H 1 00 MAXI 2 30 0 2F F LJ 0 5 0 1Symbol Parameter Value Unit L 0 50 0 101 2 3O 1 6

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC847RA | 2N2874 | 2SB744A | 2N332A | MMBT3906HE3 | BDW24 | 2N5050

Keywords - FTB1260 transistor datasheet

 FTB1260 cross reference
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