FTB1366F Datasheet, Equivalent, Cross Reference Search
Type Designator: FTB1366F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220F
FTB1366F Transistor Equivalent Substitute - Cross-Reference Search
FTB1366F Datasheet (PDF)
ftb1366f.pdf
SEMICONDUCTORFTB1366FTECHNICAL DATACA FTB1366F TRANSISTOR (PNP) E DIM MILLIMETERS_A 10 16 0 20+_B 15 00 0 20+FEATURES _C 3 00 0 20+Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) D 0 6250 125E 3 50 typComplementary to FTD2058F F 2 7 typ_G 16 80 0 4+LM_H 0 45 0 1R +_J 13 20 + 0 20MAXIMUM RATINGS (Ta=25 unless otherwise noted)
ftb1366.pdf
SEMICONDUCTORFTB1366TECHNICAL DATA FTB1366 TRANSISTOR (PNP) TO-220F FEATURES Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A)1. BASE Complementary to FTD2058 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V
ftb1386.pdf
SEMICONDUCTORFTB1386TECHNICAL DATAFTB1386 FEATURES AC Excellent DC current gain characteristics HG Low collector saturation voltage Complements the FTD2098DDMAXIMUM RATINGS (Ta=25 unless otherwise noted) KF FDIM MILLIMETERSSymbol Parameter Value Unit A 4.70 MAX_+B 2.50 0.20VCBO -30 V Collector-Base Voltage C 1.70 MAX1 2 3D 0.45+0.15/-0.1
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
