FTC3199 Datasheet, Equivalent, Cross Reference Search
Type Designator: FTC3199
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92M
FTC3199 Transistor Equivalent Substitute - Cross-Reference Search
FTC3199 Datasheet (PDF)
ftc3199.pdf
SEMICONDUCTORFTC3199TECHNICAL DATABFTC3199 TRANSISTOR (NPN) KFEATURES High DC Current Gain DIM MILLIMETERSA 3.25 MAX Complementary to FTA1267 B 4.20 MAXCC 0.48 MAX_D 1.52 0.1+E 1.27E E_F 15.30 0.20+G 0.76H 4531 2 J 0.51 MAXJK 0.25H1. EMITTER2. COLLECTOR3. BASETO-92MMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramete
ftc3198.pdf
SEMICONDUCTORFTC3198TECHNICAL DATATRANSISTOR (NPN) B CFEATURES General Purpose Switching Application Complementary to FTA1266. DIM MILLIMETERSA 4.70 MAXEB 4.80 MAX GC 3.70 MAXDD 0.55 MAXMAXIMUM RATINGS (Ta=25 unless otherwise noted) E 1.00F 1.27G 0.85Symbo Parameter Value UnitH 0.45_HVCBO Collector-Base Voltage 60 V J 14.00 + 0.50L 2.30F
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
