FTC3876 Datasheet, Equivalent, Cross Reference Search
Type Designator: FTC3876
SMD Transistor Code: HWO_HWY_HWG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT23
FTC3876 Transistor Equivalent Substitute - Cross-Reference Search
FTC3876 Datasheet (PDF)
ftc3876.pdf
SEMICONDUCTORFTC3876TECHNICAL DATAGeneral Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.Purpose: General amplifier and switching application. Features: Excellent h linearity, complementary pair with FTA1505. FEAbsolute maximum ratings(Ta=25) 3 Symbol Rating Unit 2V 35 V CBO 1V 30 V CEO SOT 23
ftc3880.pdf
SEMICONDUCTORFTC3880TECHNICAL DATAPurpose: High frequency low noise amplifier. Features: Small reverse transfer capacitance, low noise figure.Absolute maximum ratings(Ta=25) 3Symbol Rating Unit 2V 40 V CBO 1V 30 V CEO SOT23V 4.0 V EBO I 20 mA C I -20 mA COLLECTORE 3P 150 mW C T 150 1j BASET -55150 stg 2 EMITTEREle
ftc3837.pdf
SEMICONDUCTORFTC3837TECHNICAL DATAHigh-Frequency Amplifier TransistorFeatures1.High transition frequency.(Typ.fT=1.5GHz)32.Small rbb`Cc and high gain.(Typ.6ps)23.Small NF.14.We declare that the material of product compliance with RoHS requirements.SOT23MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCOLLECTORCollector-Base Volta
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SD371
