FTC3876 Specs and Replacement
Type Designator: FTC3876
SMD Transistor Code: HWO_HWY_HWG
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: SOT23
FTC3876 Substitution
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FTC3876 datasheet
SEMICONDUCTOR FTC3876 TECHNICAL DATA General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. Purpose General amplifier and switching application. Features Excellent h linearity, complementary pair with FTA1505. FE Absolute maximum ratings(Ta=25 ) 3 Symbol Rating Unit 2 V 35 V CBO 1 V 30 V CEO SOT 23... See More ⇒
SEMICONDUCTOR FTC3880 TECHNICAL DATA Purpose High frequency low noise amplifier. Features Small reverse transfer capacitance, low noise figure. Absolute maximum ratings(Ta=25 ) 3 Symbol Rating Unit 2 V 40 V CBO 1 V 30 V CEO SOT 23 V 4.0 V EBO I 20 mA C I -20 mA COLLECTOR E 3 P 150 mW C T 150 1 j BASE T -55 150 stg 2 EMITTER Ele... See More ⇒
SEMICONDUCTOR FTC3837 TECHNICAL DATA High-Frequency Amplifier Transistor Features 1.High transition frequency.(Typ.fT=1.5GHz) 3 2.Small rbb Cc and high gain.(Typ.6ps) 2 3.Small NF. 1 4.We declare that the material of product compliance with RoHS requirements. SOT 23 MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit COLLECTOR Collector-Base Volta... See More ⇒
Detailed specifications: FTC3202, FTC3203, FTC3227, FTC3265, FTC3303, FTC3356, FTC3356U, FTC3837, BC327, FTC3880, FTC4081, FTC4083, FTC4226, FTC4370A, FTC4373, FTC4374, FTC4375
Keywords - FTC3876 pdf specs
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History: BC231 | BC254A | 2SB1409SC | BDBO1C | MJ11017 | BCR135 | BC848A
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