FTD1304 Datasheet, Equivalent, Cross Reference Search
Type Designator: FTD1304
SMD Transistor Code: HMAX
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT23
FTD1304 Transistor Equivalent Substitute - Cross-Reference Search
FTD1304 Datasheet (PDF)
..1. Size:270K first silicon
ftd1304.pdf
ftd1304.pdf
SEMICONDUCTORFTD1304TECHNICAL DATA FTD1304 TRANSISTOR (NPN) FEATURES High emitter-base voltage 3 low on resistance 2MARKING: HMAX 1MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT 23Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V COLLECTOR3VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V 1IC Collector Current
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
