All Transistors. FTD1499 Datasheet

 

FTD1499 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FTD1499
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220F

 FTD1499 Transistor Equivalent Substitute - Cross-Reference Search

   

FTD1499 Datasheet (PDF)

 ..1. Size:183K  first silicon
 ftd1499.pdf

FTD1499 FTD1499

SEMICONDUCTORFTD1499TECHNICAL DATACA FTD1499 TRANSISTOR (NPN) E DIM MILLIMETERS_A 10 16 0 20+_B 15 00 0 20+FEATURES _C 3 00 0 20+Extremely Satisfactory Linearity of the Forward Current D 0 6250 125E 3 50 typTransfer Ratio hFEF 2 7 typ_G 16 80 0 4+Wide Safe Operation Area LM_H 0 45 0 1R +_J 13 20 + 0 20High Transition Frequency fT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FXT651

 

 
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