FTD1499 Specs and Replacement
Type Designator: FTD1499
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO220F
FTD1499 Substitution
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FTD1499 datasheet
SEMICONDUCTOR FTD1499 TECHNICAL DATA C A FTD1499 TRANSISTOR (NPN) E DIM MILLIMETERS _ A 10 16 0 20 + _ B 15 00 0 20 + FEATURES _ C 3 00 0 20 + Extremely Satisfactory Linearity of the Forward Current D 0 625 0 125 E 3 50 typ Transfer Ratio hFE F 2 7 typ _ G 16 80 0 4 + Wide Safe Operation Area L M _ H 0 45 0 1 R + _ J 13 20 + 0 20 High Transition Frequency fT... See More ⇒
Detailed specifications: FTC4379, FTC4617, FTC8050, FTC8050H, FTC9012S, FTC9013S, FTC945B, FTD1304, SS8050, FTD1616A, FTD1624, FTD1760, FTD1781K, FTD1898, FTD1899, FTD2058, FTD2058F
Keywords - FTD1499 pdf specs
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History: ZTX4400M | FTC4617 | ERS301 | 2SA124 | BC237C
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