All Transistors. FTD1616A Datasheet


FTD1616A Datasheet, Equivalent, Cross Reference Search

Type Designator: FTD1616A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 19 pF

Forward Current Transfer Ratio (hFE), MIN: 135

Noise Figure, dB: -

Package: TO92

FTD1616A Transistor Equivalent Substitute - Cross-Reference Search


FTD1616A Datasheet (PDF)

0.1. ftd1616a.pdf Size:256K _first_silicon


SEMICONDUCTORFTD1616ATECHNICAL DATAGe P po e T is oNPN SiliconB C FEATURE Complementary PNP Type available (FTB1116A) DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXD MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 0.55 MAXE 1.00F 1.27Symbol Parameter Value Units G 0.85H 0.45_VCBO Collector-Base Voltage 120 V HJ 14.00 + 0.50L 2.30F FM 0.51

9.1. ftd1624.pdf Size:1562K _first_silicon


SEMICONDUCTORFTD1624TECHNICAL DATAVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTACHGFEATURESAdoption of MBIT processes.Low collector-to-emitter saturation voltage.Fast switching speed. DDKLarge current capacity and wide ASO.F FDIM MILLIMETERSComplementary to FTB1124.A 4.70 MAX_+B 2.50 0.20C 1.70 MAXMAXIMUM RATING (Ta=25 )1

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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