FTD1616A Datasheet, Equivalent, Cross Reference Search
Type Designator: FTD1616A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: TO92
FTD1616A Transistor Equivalent Substitute - Cross-Reference Search
FTD1616A Datasheet (PDF)
ftd1616a.pdf
SEMICONDUCTORFTD1616ATECHNICAL DATAGe P po e T is oNPN SiliconB C FEATURE Complementary PNP Type available (FTB1116A) DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXD MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 0.55 MAXE 1.00F 1.27Symbol Parameter Value Units G 0.85H 0.45_VCBO Collector-Base Voltage 120 V HJ 14.00 + 0.50L 2.30F FM 0.51
ftd1624.pdf
SEMICONDUCTORFTD1624TECHNICAL DATAVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTACHGFEATURESAdoption of MBIT processes.Low collector-to-emitter saturation voltage.Fast switching speed. DDKLarge current capacity and wide ASO.F FDIM MILLIMETERSComplementary to FTB1124.A 4.70 MAX_+B 2.50 0.20C 1.70 MAXMAXIMUM RATING (Ta=25 )1
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
