All Transistors. A966O Datasheet

 

A966O Datasheet and Replacement


   Type Designator: A966O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92L
 

 A966O Substitution

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A966O Datasheet (PDF)

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A966O

A966 PNP silicon APPLICATION: Audio Power Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -30 VTO-92L1Emitter-base voltage VEBO -5 V1. Emitter 2. Collector 3. BaseCollector current IC -1.5 ACollector Power Dissipation PC 900 mWJunc

Datasheet: MJE13002B , MJE13003A , MJE13003I , MJE13003T , MJE13005T , MMBTA42F , MMBTA92F , MMBTH10Q , D667 , A966Y , DDA124EK , DDA144EK , DDA114YK , DDA123JK , DDA114EK , DDA143TK , DDA114TK .

Keywords - A966O transistor datasheet

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