A966O Specs and Replacement
Type Designator: A966O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92L
A966O Substitution
- BJT ⓘ Cross-Reference Search
A966O datasheet
A966 PNP silicon APPLICATION Audio Power Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V TO-92L 1 Emitter-base voltage VEBO -5 V 1. Emitter 2. Collector 3. Base Collector current IC -1.5 A Collector Power Dissipation PC 900 mW Junc... See More ⇒
Detailed specifications: MJE13002B, MJE13003A, MJE13003I, MJE13003T, MJE13005T, MMBTA42F, MMBTA92F, MMBTH10Q, BC547B, A966Y, DDA124EK, DDA144EK, DDA114YK, DDA123JK, DDA114EK, DDA143TK, DDA114TK
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