3DG3001A1-H Datasheet, Equivalent, Cross Reference Search

   Type Designator: 3DG3001A1-H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92

3DG3001A1-H Transistor Equivalent Substitute - Cross-Reference Search

3DG3001A1-H Datasheet (PDF)

..1. Size:178K crhj
3dg3001a1-h.pdf

NPN R 3DG3001 A1-H 3DG3001 A1-H VCEO 450 V NPN IC 0.8 A Ptot Ta=25 0.8 W

7.1. Size:178K crhj
3dg3001 a1-h.pdf

NPN R 3DG3001 A1-H 3DG3001 A1-H VCEO 450 V NPN IC 0.8 A Ptot Ta=25 0.8 W

9.1. Size:718K jilin sino
3dg3020.pdf

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DG3020 MAIN CHARACTERISTICS Package I 1.5A CV 450V CEOP (TO-92) 1W CP (IPAK) 10W CP (TO-126/DPAK) 20W C APPLICATIONS TO-92-FJ TO-126 Battery charger Electronic ballasts High

9.2. Size:178K crhj
3dg3020a1.pdf

NPN R 3DG3020 A1 3DG3020 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W

9.3. Size:111K china
3dg3020.pdf

3DG3020 NPN A B C PCM TA=25 800 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 120 140 V V(BR)CEO ICE=0.1mA 80 100 120 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=2V 0.5 A VBEsat 1.0 I

9.4. Size:118K china
3dg302.pdf

3DG302 NPN A B C PCM 800 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 120 140 V V(BR)CEO ICE=0.1mA 80 100 120 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=2V 0.5 A VBEsat 1.0 IC=200mA

9.5. Size:176K wuxi china
3dg3020a1.pdf