3DG3001A1-H Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG3001A1-H
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
3DG3001A1-H Transistor Equivalent Substitute - Cross-Reference Search
3DG3001A1-H Datasheet (PDF)
3dg3001a1-h.pdf
NPN R 3DG3001 A1-H 3DG3001 A1-H VCEO 450 V NPN IC 0.8 A Ptot Ta=25 0.8 W
3dg3001 a1-h.pdf
NPN R 3DG3001 A1-H 3DG3001 A1-H VCEO 450 V NPN IC 0.8 A Ptot Ta=25 0.8 W
3dg3020a1.pdf
NPN R 3DG3020 A1 3DG3020 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
3dg3020.pdf
3DG3020 NPN A B C PCM TA=25 800 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 120 140 V V(BR)CEO ICE=0.1mA 80 100 120 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=2V 0.5 A VBEsat 1.0 I
3dg302.pdf
3DG302 NPN A B C PCM 800 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 120 140 V V(BR)CEO ICE=0.1mA 80 100 120 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=2V 0.5 A VBEsat 1.0 IC=200mA
3dg3020a1.pdf
NPN R 3DG3020 A1 3DG3020 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N3906 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
