2SB0710A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB0710A
SMD Transistor Code: DQ_DR_DS
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: SOT23-3L
2SB0710A Transistor Equivalent Substitute - Cross-Reference Search
2SB0710A Datasheet (PDF)
..1. Size:201K lge
2sb0710a.pdf
2sb0710a.pdf
2SB0710A SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2.922. EMITTER 0.351.173. COLLECTOR Features2.80 1.60 Large collector current IC Complements the 2SD0602A. 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
