All Transistors. 13007 Datasheet

 

13007 Datasheet, Equivalent, Cross Reference Search

Type Designator: 13007

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

13007 Transistor Equivalent Substitute - Cross-Reference Search

 

13007 Datasheet (PDF)

..1. 13007.pdf Size:114K _jdsemi

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R13007 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEAT

0.1. xw6821 xw6822 xw6822a xw6823 xw6823a xw13001 sxw13001 xw13002 sxw13002 xw13003 sxw13003 sxw13005 sxw13007 sxw13009.pdf Size:222K _1

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0.2. 3dd13007k.pdf Size:376K _1

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13007K MAIN CHARACTERISTICS Package IC 8AVCEO 400VPC(TO-220) 80W APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply

 0.3. mje13007.pdf Size:337K _motorola

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Order this documentMOTOROLAby MJE13007/DSEMICONDUCTOR TECHNICAL DATAMJE13007MJF13007Designer's Data SheetSWITCHMODENPN Bipolar Power TransistorPOWER TRANSISTORFor Switching Power

0.4. phe13007.pdf Size:58K _philips

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Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTIONThe PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS

 0.5. st13007-.pdf Size:68K _st

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ST13007FP HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDo FULLY CHARACTERIZED AT 125 C LARGE RBSOA32APPLICATIONS1 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTINGTO-220FP SWITCH MODE POWER SUPPLIESDESCRIPTION

0.6. mje13007.pdf Size:29K _st

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MJE13007 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITYAPPLICATIONS SWITCHING REGULATORS MOTOR CONTROLDESCRIPTION32The MJE13007 is a silicon multiepitaxial mesa1NPN power transistor mounted in Jedec TO-220plastic package.TO-220It is are inteded for use in motor control, switchingregulators etc.INTE

0.7. mje13007a.pdf Size:63K _st

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MJE13007A SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3The MJE13007A is silicon multiepitaxial mesa 21NPN power transistor mounted in Jedec TO-220plastic package.TO-220They are inteded for use in motor control,switching regulators etc.INTER

0.8. st13007d.pdf Size:213K _st

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ST13007DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARACT

0.9. st13007.pdf Size:253K _st

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ST13007High voltage fast-switching NPN power transistorFeatures DC current gain classificationTAB High voltage capability Low spread of dynamic parameters Very high switching speedApplications 321 Electronic ballast for fluorescent lightingTO-220 Switch mode power suppliesDescriptionFigure 1. Internal schematic diagramThe device is manufactured

0.10. stb13007dt4.pdf Size:235K _st

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STB13007DT4High voltage fast-switching NPN power transistorGeneral features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operationD2PAK Very high

0.11. st13007dfp.pdf Size:160K _st

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ST13007DFPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARA

0.12. fjpf13007.pdf Size:59K _fairchild_semi

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FJPF13007High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEBO E

0.13. kse13006,13007.pdf Size:48K _fairchild_semi

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KSE13006/13007High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : KSE13006 600 V : KSE13007 700 V VCEO Collector-Emitter Voltage : KSE13006

0.14. fjp13007.pdf Size:540K _fairchild_semi

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July 2008FJP13007High Voltage Fast-Switching NPN Power TransistorHigh Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base

0.15. kse13007f.pdf Size:23K _samsung

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KSE13007F NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONSTO-220F High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage VEBO 9 V Collector Current (DC) IC 8 A Collector Current (Pulse) IC 16

0.16. mje13007-d.pdf Size:194K _onsemi

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MJE13007GSWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE13007G is designed for high-voltage, high-speed powerhttp://onsemi.comswitching inductive circuits where fall time is critical. It is particularlysuited for 115 and 220 V SWITCHMODE applications such asSwitching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTORdri

0.17. mje13007g.pdf Size:408K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7

0.18. mje13007.pdf Size:380K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7

0.19. mje13007-m.pdf Size:351K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage andhigh-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V

0.20. mje13007d.pdf Size:368K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage,high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 70

0.21. std13007.pdf Size:293K _auk

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STD13007NPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C High Collector Voltage : VCBO = 700V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E ESTD13007 STD13007 TO-220ABAbsolute maximum ratings (Ta=25C) Characteristic Symbol Ratin

0.22. std13007p.pdf Size:264K _auk

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STD13007PNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C High Collector Voltage : VCBO = 700V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E ESTD13007P STD13007 TO-220ABAbsolute maximum ratings (Ta=25C) Characteristic Symbol Rat

0.23. std13007f.pdf Size:265K _auk

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STD13007FNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C High Collector Voltage : VCBO = 700V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E ESTD13007F STD13007 TO-220F-3LAbsolute maximum ratings (Ta=25C) Characteristic Symbol R

0.24. std13007fc.pdf Size:265K _auk

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STD13007FCNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching High Collector Voltage : VCBO = 700V C Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E STD13007FC STD13007 TO-220F-3SLEAbsolute maximum ratings (Tc=25) Characteristic Sym

0.25. ts13007b.pdf Size:177K _taiwansemi

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TS13007B High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007

0.26. ts13007b a07.pdf Size:176K _taiwansemi

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TS13007B High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007

0.27. cje13007.pdf Size:84K _cdil

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR CJE13007TO-220Plastic PackageUsed in Energy Saving Lights and Power Switching Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCollector Current

0.28. cdl13007ddl.pdf Size:218K _cdil

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCDL13007DTO-220Plastic PackageBuilt in DiodeABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VVCEOCollector Emitter Voltage 400 VVEBOEmitter Base Voltage 9 VICCollector Current Continuous 7 ACollector Power Diss

0.29. cdl13007.pdf Size:85K _cdil

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR CDL13007TO-220Plastic PackageUsed in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCollector Current Con

0.30. mje13007.pdf Size:339K _kec

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SEMICONDUCTOR MJE13007TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.6 S(Max.), at IC=5AS(Max.), tf=0.7High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Vol

0.31. mje13007f.pdf Size:351K _kec

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SEMICONDUCTOR MJE13007FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.6 S(Max.), at IC=5AS(Max.), tf=0.7High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Vo

0.32. 3dd13007.pdf Size:274K _lge

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3DD13007(NPN) TO-220 TransistorTO-2201.BASE 2.COLLECTOR 3.EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8

0.33. hmje13007a.pdf Size:50K _hsmc

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Spec. No. : HE200501 HI-SINCERITY Issued Date : 2005.06.01 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (

0.34. hmje13007.pdf Size:50K _hsmc

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Spec. No. : HE200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T

0.35. mje13007.pdf Size:234K _sisemi

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007NPN MJE /MJE SERIES TRANSISTORS MJE13007NPN MJE

0.36. mje13007m.pdf Size:221K _sisemi

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007MNPN MJE /MJE SERIES TRANSISTORS MJE13007MNPN MJE

0.37. mje13007a.pdf Size:256K _sisemi

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007ANPN MJE /MJE SERIES TRANSISTORS MJE13007ANPN MJE

0.38. br3dd13007x7r.pdf Size:455K _blue-rocket-elect

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MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

0.39. br3dd13007x9p.pdf Size:447K _blue-rocket-elect

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MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

0.40. mje13007x7.pdf Size:455K _blue-rocket-elect

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MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

0.41. mje13007x9.pdf Size:447K _blue-rocket-elect

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MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

0.42. mje13007hv7.pdf Size:506K _blue-rocket-elect

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MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

0.43. br3dd13007hv7r.pdf Size:506K _blue-rocket-elect

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MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

0.44. mje13007v8.pdf Size:439K _blue-rocket-elect

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MJE13007V8(BR3DD13007V8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

0.45. mje13007x8.pdf Size:441K _blue-rocket-elect

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MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

0.46. br3dd13007x8f.pdf Size:441K _blue-rocket-elect

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MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

0.47. mje13007v9.pdf Size:456K _blue-rocket-elect

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MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

0.48. br3dd13007v9p.pdf Size:456K _blue-rocket-elect

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MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

0.49. br3dd13007v8f.pdf Size:439K _blue-rocket-elect

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MJE13007V8(BR3DD13007V8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

0.50. st13007.pdf Size:380K _semtech

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ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCollector Current IC 8 AOTotal Power Dissipation (Ta = 25 C) Ptot 2 WOTotal Power Dissipation (

0.51. ksh13007w.pdf Size:146K _shantou-huashan

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N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13007W HIGH VOLTAGE SWITCH MODE APPLICATION ABSOLUTE MAXIMUM RATINGSTa=25 TO-263D2PAKTstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

0.52. 3dd13007b8.pdf Size:154K _crhj

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NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

0.53. 3dd13007y8.pdf Size:153K _crhj

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NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80

0.54. 3dd13007 b8d.pdf Size:154K _crhj

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NPN R 3DD13007 B8D 3DD13007 B8D NPN VCEO 400 V IC 7 A Ptot TC=25 80 W

0.55. 3dd13007z7.pdf Size:147K _crhj

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NPN R 3DD13007 Z7 3DD13007 Z7 NPN VCEO 200 V IC 8 A Ptot TC=25 50 W

0.56. 3dd13007 h8d.pdf Size:155K _crhj

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NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90

0.57. 3dd13007 b8.pdf Size:155K _crhj

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NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

0.58. 3dd13007z8.pdf Size:155K _crhj

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NPN R 3DD13007 Z8 3DD13007 Z8 NPN VCEO 200 V IC 8 A Ptot TC=25 75 W

0.59. 3dd13007h8d.pdf Size:155K _crhj

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NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90

0.60. 3dd13007 z7.pdf Size:151K _crhj

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NPN R 3DD13007 Z7 3DD13007 Z7 NPN VCEO 200 V IC 8 A Ptot TC=25 50 W

0.61. 3dd13007 x1.pdf Size:153K _crhj

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NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

0.62. 3dd13007 y8.pdf Size:153K _crhj

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NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80

0.63. 3dd13007 z8.pdf Size:154K _crhj

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NPN R 3DD13007 Z8 3DD13007 Z8 NPN VCEO 200 V IC 8 A Ptot TC=25 75 W

0.64. 3dd13007x1.pdf Size:152K _crhj

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NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

0.65. 13007s.pdf Size:121K _jdsemi

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R13007S www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Computer Switch Power Supply and All kinds of power switch circuit 222FEATUR

0.66. 13007dl.pdf Size:115K _jdsemi

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R13007DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.67. 13007t.pdf Size:113K _jdsemi

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R13007T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

0.68. 3dd13007.pdf Size:512K _tysemi

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SMD rDIP Ty Trans storSMD Type TransistorSMD Type TransistoCSMDTyppee Tra n s iis tIorsTypeProduct specification3DD13007 FeaturesTO-263Unit: mm High Speed Switching+0.24.57-0.2+0.11.27-0.1 Suitable for Switching Regulator and Motor Control+0.10.1max1.27-0.11 32+0.10.81-0.12.541. BASE+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22. COLLE

0.69. mje13007f.pdf Size:286K _first_silicon

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SEMICONDUCTORMJE13007FTECHNICAL DATAC MJE13007F ATRANSISTOR (NPN) SWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS_A 10 16 0 20+HIGH SPEED DC-DC CONVERTER APPLICATION._B 15 00 0 20+_C 3 00 0 20+FLUORESCENT LIGHT BALLASTOR APPLICATION.D 0 6250 125E 3 50 typF 2 7 typ_G 16 80 0 4+LMFEATURES _H 0 45 0 1

0.70. wbp13007-k.pdf Size:369K _winsemi

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WBP13007-KHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCCGeneral Description EEEETO220TO220TO220TO220This

0.71. sbp13007x.pdf Size:290K _winsemi

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SBP13007-XHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCCGeneral DescriptionGeneral Descr

0.72. sbp13007o.pdf Size:335K _winsemi

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SBP13007-OSBP13007-OSBP13007-OSBP13007-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCC

0.73. sbf13007-o.pdf Size:329K _winsemi

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SBF13007-OSBF13007-OSBF13007-OSBF13007-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Isolation Voltage

0.74. sbp13007k.pdf Size:435K _winsemi

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SBP13007-KSBP13007-KSBP13007-KSBP13007-KHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCC

0.75. sbp13007s.pdf Size:377K _winsemi

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SBP13007-SSBP13007-SSBP13007-SSBP13007-SHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

0.76. sbp13007d.pdf Size:315K _winsemi

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SBP13007DSBP13007DSBP13007DSBP13007DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed Minimum Lot-to-Lot h VariationFE Wide Reverse Bias SOA Built-in fr

0.77. mje13007dv7.pdf Size:240K _foshan

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MJE13007DV7 NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0

0.78. mje13007v7.pdf Size:238K _foshan

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MJE13007V7(3DD13007V7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 8.0 A C I 16 A

0.79. ksh13007.pdf Size:229K _semihow

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KSH13007KSH13007 SEMIHOW REV.A1,Oct 2007KSH130007KSH13007Switch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls8 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted80 WattsTO-220CH

0.80. ksh13007a.pdf Size:229K _semihow

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KSH13007AKSH13007A SEMIHOW REV.A1,Oct 2007KSH130007AKSH13007ASwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls8 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted80 WattsTO-220

0.81. ksh13007af.pdf Size:226K _semihow

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KSH13007AFKSH13007AF SEMIHOW REV.A1,Oct 2007KSH130007AFKSH13007AFSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls8 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted80 WattsTO

0.82. ksh13007f.pdf Size:226K _semihow

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KSH13007FKSH13007F SEMIHOW REV.A1,Oct 2007KSH130007FKSH13007FSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls8 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted80 WattsTO-220

0.83. mjf13007.pdf Size:215K _inchange_semiconductor

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isc Silicon NPN Power Transistor MJF13007DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 2.0(Max) @ I = 5.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are pa

0.84. je13007.pdf Size:149K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13007 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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