All Transistors. 13007 Datasheet

 

13007 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 13007
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 9 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220

 13007 Transistor Equivalent Substitute - Cross-Reference Search

   

13007 Datasheet (PDF)

 ..1. Size:114K  jdsemi
13007.pdf

13007
13007

R13007 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEAT

 0.1. Size:376K  1
3dd13007k.pdf

13007
13007

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13007K MAIN CHARACTERISTICS Package IC 8AVCEO 400VPC(TO-220) 80W APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply

 0.3. Size:337K  motorola
mje13007.pdf

13007
13007

Order this documentMOTOROLAby MJE13007/DSEMICONDUCTOR TECHNICAL DATAMJE13007MJF13007Designer's Data SheetSWITCHMODENPN Bipolar Power TransistorPOWER TRANSISTORFor Switching Power

 0.4. Size:58K  philips
phe13007.pdf

13007
13007

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTIONThe PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS

 0.5. Size:63K  st
mje13007a.pdf

13007
13007

MJE13007A SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3The MJE13007A is silicon multiepitaxial mesa 21NPN power transistor mounted in Jedec TO-220plastic package.TO-220They are inteded for use in motor control,switching regulators etc.INTER

 0.6. Size:214K  st
st13007d.pdf

13007
13007

ST13007DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARACT

 0.7. Size:228K  st
stb13007dt4.pdf

13007
13007

STB13007DT4High voltage fast-switching NPN power transistorGeneral features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operationD2PAK Very high

 0.8. Size:29K  st
mje13007.pdf

13007
13007

MJE13007 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITYAPPLICATIONS SWITCHING REGULATORS MOTOR CONTROLDESCRIPTION32The MJE13007 is a silicon multiepitaxial mesa1NPN power transistor mounted in Jedec TO-220plastic package.TO-220It is are inteded for use in motor control, switchingregulators etc.INTE

 0.9. Size:160K  st
st13007dfp.pdf

13007
13007

ST13007DFPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARA

 0.10. Size:68K  st
st13007-.pdf

13007
13007

ST13007FP HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDo FULLY CHARACTERIZED AT 125 C LARGE RBSOA32APPLICATIONS1 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTINGTO-220FP SWITCH MODE POWER SUPPLIESDESCRIPTION

 0.11. Size:252K  st
st13007.pdf

13007
13007

ST13007High voltage fast-switching NPN power transistorFeatures DC current gain classificationTAB High voltage capability Low spread of dynamic parameters Very high switching speedApplications 321 Electronic ballast for fluorescent lightingTO-220 Switch mode power suppliesDescriptionFigure 1. Internal schematic diagramThe device is manufactured

 0.12. Size:48K  fairchild semi
kse13006,13007.pdf

13007
13007

KSE13006/13007High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : KSE13006 600 V : KSE13007 700 V VCEO Collector-Emitter Voltage : KSE13006

 0.13. Size:540K  fairchild semi
fjp13007.pdf

13007
13007

July 2008FJP13007High Voltage Fast-Switching NPN Power TransistorHigh Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base

 0.14. Size:59K  fairchild semi
fjpf13007.pdf

13007
13007

FJPF13007High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEBO E

 0.15. Size:23K  samsung
kse13007f.pdf

13007
13007

KSE13007F NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONSTO-220F High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage VEBO 9 V Collector Current (DC) IC 8 A Collector Current (Pulse) IC 16

 0.16. Size:246K  onsemi
fjp13007tu fjp13007h1tu fjp13007h1tu-f080 fjp13007h2tu fjp13007h2tu-f080.pdf

13007
13007

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 0.17. Size:275K  onsemi
mje13007.pdf

13007
13007

MJE13007Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE13007 is designed for high-voltage, high-speed powerwww.onsemi.comswitching inductive circuits where fall time is critical. It is particularlysuited for 115 and 220 V switch-mode applications such as SwitchingPOWER TRANSISTORRegulators, Inverters, Motor Controls, Solenoid/Relay drivers

 0.18. Size:215K  onsemi
fjpf13007.pdf

13007
13007

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.19. Size:194K  onsemi
mje13007-d.pdf

13007
13007

MJE13007GSWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE13007G is designed for high-voltage, high-speed powerhttp://onsemi.comswitching inductive circuits where fall time is critical. It is particularlysuited for 115 and 220 V SWITCHMODE applications such asSwitching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTORdri

 0.20. Size:408K  utc
mje13007g.pdf

13007
13007

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7

 0.21. Size:380K  utc
mje13007.pdf

13007
13007

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7

 0.22. Size:368K  utc
mje13007d.pdf

13007
13007

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage,high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 70

 0.23. Size:351K  utc
mje13007-m.pdf

13007
13007

UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage andhigh-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V

 0.24. Size:265K  auk
std13007f.pdf

13007
13007

STD13007FNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C High Collector Voltage : VCBO = 700V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E ESTD13007F STD13007 TO-220F-3LAbsolute maximum ratings (Ta=25C) Characteristic Symbol R

 0.25. Size:264K  auk
std13007p.pdf

13007
13007

STD13007PNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C High Collector Voltage : VCBO = 700V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E ESTD13007P STD13007 TO-220ABAbsolute maximum ratings (Ta=25C) Characteristic Symbol Rat

 0.26. Size:293K  auk
std13007.pdf

13007
13007

STD13007NPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C High Collector Voltage : VCBO = 700V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E ESTD13007 STD13007 TO-220ABAbsolute maximum ratings (Ta=25C) Characteristic Symbol Ratin

 0.27. Size:265K  auk
std13007fc.pdf

13007
13007

STD13007FCNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching High Collector Voltage : VCBO = 700V C Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E STD13007FC STD13007 TO-220F-3SLEAbsolute maximum ratings (Tc=25) Characteristic Sym

 0.28. Size:176K  taiwansemi
ts13007b a07.pdf

13007
13007

TS13007B High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007

 0.29. Size:177K  taiwansemi
ts13007b.pdf

13007
13007

TS13007B High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007

 0.30. Size:85K  cdil
cdl13007.pdf

13007
13007

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR CDL13007TO-220Plastic PackageUsed in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCollector Current Con

 0.31. Size:218K  cdil
cdl13007ddl.pdf

13007
13007

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCDL13007DTO-220Plastic PackageBuilt in DiodeABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VVCEOCollector Emitter Voltage 400 VVEBOEmitter Base Voltage 9 VICCollector Current Continuous 7 ACollector Power Diss

 0.32. Size:84K  cdil
cje13007.pdf

13007
13007

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR CJE13007TO-220Plastic PackageUsed in Energy Saving Lights and Power Switching Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCollector Current

 0.33. Size:767K  jiangsu
3dd13007n36f.pdf

13007
13007

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistor 3DD13007N36F TRANSISTOR (NPN)TO-220FFEATURES Power switching applications1. BASE1232. COLLECTOR3. EMITTER 13007N=Device code Equivalent Circuit Solid dot=Green moldinn compound device, if none,the normal device 13007N36F=Code36FMAXIMUM RATINGS (Ta=25 unl

 0.34. Size:339K  kec
mje13007.pdf

13007
13007

SEMICONDUCTOR MJE13007TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.6 S(Max.), at IC=5AS(Max.), tf=0.7High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Vol

 0.35. Size:351K  kec
mje13007f.pdf

13007
13007

SEMICONDUCTOR MJE13007FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.6 S(Max.), at IC=5AS(Max.), tf=0.7High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Vo

 0.36. Size:274K  lge
3dd13007.pdf

13007
13007

3DD13007(NPN) TO-220 TransistorTO-2201.BASE 2.COLLECTOR 3.EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8

 0.37. Size:50K  hsmc
hmje13007a.pdf

13007
13007

Spec. No. : HE200501 HI-SINCERITY Issued Date : 2005.06.01 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (

 0.38. Size:50K  hsmc
hmje13007.pdf

13007
13007

Spec. No. : HE200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T

 0.39. Size:256K  sisemi
mje13007a.pdf

13007
13007

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007ANPN MJE /MJE SERIES TRANSISTORS MJE13007ANPN MJE

 0.40. Size:234K  sisemi
mje13007.pdf

13007
13007

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007NPN MJE /MJE SERIES TRANSISTORS MJE13007NPN MJE

 0.41. Size:221K  sisemi
mje13007m.pdf

13007
13007

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007MNPN MJE /MJE SERIES TRANSISTORS MJE13007MNPN MJE

 0.42. Size:486K  jilin sino
3dd13007k.pdf

13007
13007

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13007K MAIN CHARACTERISTICS Package IC 8AVCEO 400VPC(TO-220) 80W APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply

 0.43. Size:536K  jilin sino
3dd13007md.pdf

13007
13007

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13007MD MAIN CHARACTERISTICS Package IC 8A VCEO 400V PC(TO-220HF/220MF/220MF-K1) 45W PC(TO-262/220C/220C-S1/263) 80W APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power

 0.44. Size:447K  blue-rocket-elect
br3dd13007x9p.pdf

13007
13007

MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

 0.45. Size:441K  blue-rocket-elect
mje13007x8.pdf

13007
13007

MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

 0.46. Size:439K  blue-rocket-elect
br3dd13007v8f.pdf

13007
13007

MJE13007V8(BR3DD13007V8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

 0.47. Size:447K  blue-rocket-elect
mje13007x9.pdf

13007
13007

MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

 0.48. Size:439K  blue-rocket-elect
mje13007v8.pdf

13007
13007

MJE13007V8(BR3DD13007V8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

 0.49. Size:455K  blue-rocket-elect
mje13007x7.pdf

13007
13007

MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

 0.50. Size:456K  blue-rocket-elect
br3dd13007v9p.pdf

13007
13007

MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

 0.51. Size:506K  blue-rocket-elect
br3dd13007hv7r.pdf

13007
13007

MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

 0.52. Size:456K  blue-rocket-elect
mje13007v9.pdf

13007
13007

MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

 0.53. Size:455K  blue-rocket-elect
br3dd13007x7r.pdf

13007
13007

MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

 0.54. Size:506K  blue-rocket-elect
mje13007hv7.pdf

13007
13007

MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

 0.55. Size:441K  blue-rocket-elect
br3dd13007x8f.pdf

13007
13007

MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

 0.56. Size:380K  semtech
st13007.pdf

13007
13007

ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCollector Current IC 8 AOTotal Power Dissipation (Ta = 25 C) Ptot 2 WOTotal Power Dissipation (

 0.57. Size:146K  shantou-huashan
ksh13007w.pdf

13007
13007

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13007W HIGH VOLTAGE SWITCH MODE APPLICATION ABSOLUTE MAXIMUM RATINGSTa=25 TO-263D2PAKTstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 0.58. Size:154K  crhj
3dd13007 z8.pdf

13007
13007

NPN R 3DD13007 Z8 3DD13007 Z8 NPN VCEO 200 V IC 8 A Ptot TC=25 75 W

 0.59. Size:153K  crhj
3dd13007y8.pdf

13007
13007

NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80

 0.60. Size:155K  crhj
3dd13007 b8.pdf

13007
13007

NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

 0.61. Size:154K  crhj
3dd13007b8.pdf

13007
13007

NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

 0.62. Size:151K  crhj
3dd13007 z7.pdf

13007
13007

NPN R 3DD13007 Z7 3DD13007 Z7 NPN VCEO 200 V IC 8 A Ptot TC=25 50 W

 0.63. Size:155K  crhj
3dd13007h8d.pdf

13007
13007

NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90

 0.64. Size:152K  crhj
3dd13007x1.pdf

13007
13007

NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

 0.65. Size:153K  crhj
3dd13007 x1.pdf

13007
13007

NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

 0.66. Size:147K  crhj
3dd13007z7.pdf

13007
13007

NPN R 3DD13007 Z7 3DD13007 Z7 NPN VCEO 200 V IC 8 A Ptot TC=25 50 W

 0.67. Size:155K  crhj
3dd13007 h8d.pdf

13007
13007

NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90

 0.68. Size:155K  crhj
3dd13007z8.pdf

13007
13007

NPN R 3DD13007 Z8 3DD13007 Z8 NPN VCEO 200 V IC 8 A Ptot TC=25 75 W

 0.69. Size:154K  crhj
3dd13007 b8d.pdf

13007
13007

NPN R 3DD13007 B8D 3DD13007 B8D NPN VCEO 400 V IC 7 A Ptot TC=25 80 W

 0.70. Size:153K  crhj
3dd13007 y8.pdf

13007
13007

NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80

 0.71. Size:115K  jdsemi
13007dl.pdf

13007
13007

R13007DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.72. Size:121K  jdsemi
13007s.pdf

13007
13007

R13007S www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Computer Switch Power Supply and All kinds of power switch circuit 222FEATUR

 0.73. Size:113K  jdsemi
13007t.pdf

13007
13007

R13007T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

 0.74. Size:512K  tysemi
3dd13007.pdf

13007
13007

SMD rDIP Ty Trans storSMD Type TransistorSMD Type TransistoCSMDTyppee Tra n s iis tIorsTypeProduct specification3DD13007 FeaturesTO-263Unit: mm High Speed Switching+0.24.57-0.2+0.11.27-0.1 Suitable for Switching Regulator and Motor Control+0.10.1max1.27-0.11 32+0.10.81-0.12.541. BASE+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22. COLLE

 0.75. Size:286K  first silicon
mje13007f.pdf

13007
13007

SEMICONDUCTORMJE13007FTECHNICAL DATAC MJE13007F ATRANSISTOR (NPN) SWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS_A 10 16 0 20+HIGH SPEED DC-DC CONVERTER APPLICATION._B 15 00 0 20+_C 3 00 0 20+FLUORESCENT LIGHT BALLASTOR APPLICATION.D 0 6250 125E 3 50 typF 2 7 typ_G 16 80 0 4+LMFEATURES _H 0 45 0 1

 0.76. Size:377K  winsemi
sbp13007s.pdf

13007
13007

SBP13007-SSBP13007-SSBP13007-SSBP13007-SHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

 0.77. Size:315K  winsemi
sbp13007d.pdf

13007
13007

SBP13007DSBP13007DSBP13007DSBP13007DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed Minimum Lot-to-Lot h VariationFE Wide Reverse Bias SOA Built-in fr

 0.78. Size:435K  winsemi
sbp13007k.pdf

13007
13007

SBP13007-KSBP13007-KSBP13007-KSBP13007-KHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCC

 0.79. Size:329K  winsemi
sbf13007-o.pdf

13007
13007

SBF13007-OSBF13007-OSBF13007-OSBF13007-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Isolation Voltage

 0.80. Size:369K  winsemi
wbp13007-k.pdf

13007
13007

WBP13007-KHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCCGeneral Description EEEETO220TO220TO220TO220This

 0.81. Size:335K  winsemi
sbp13007o.pdf

13007
13007

SBP13007-OSBP13007-OSBP13007-OSBP13007-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCC

 0.82. Size:290K  winsemi
sbp13007x.pdf

13007
13007

SBP13007-XHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCCGeneral DescriptionGeneral Descr

 0.83. Size:429K  feihonltd
fhp13007a.pdf

13007
13007

TRANSISTOR FHP13007A MAIN CHARACTERISTICS FEATURES IC 8A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 80W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballas

 0.84. Size:667K  feihonltd
j13007-1a.pdf

13007
13007

TRANSISTOR J13007-1A MAIN CHARACTERISTICS FEATURES IC 8A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 80W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballas

 0.85. Size:238K  foshan
mje13007v7.pdf

13007
13007

MJE13007V7(3DD13007V7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 8.0 A C I 16 A

 0.86. Size:240K  foshan
mje13007dv7.pdf

13007
13007

MJE13007DV7 NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0

 0.87. Size:229K  semihow
ksh13007.pdf

13007
13007

KSH13007KSH13007 SEMIHOW REV.A1,Oct 2007KSH130007KSH13007Switch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls8 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted80 WattsTO-220CH

 0.88. Size:226K  semihow
ksh13007af.pdf

13007
13007

KSH13007AFKSH13007AF SEMIHOW REV.A1,Oct 2007KSH130007AFKSH13007AFSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls8 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted80 WattsTO

 0.89. Size:226K  semihow
ksh13007f.pdf

13007
13007

KSH13007FKSH13007F SEMIHOW REV.A1,Oct 2007KSH130007FKSH13007FSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls8 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted80 WattsTO-220

 0.90. Size:229K  semihow
ksh13007a.pdf

13007
13007

KSH13007AKSH13007A SEMIHOW REV.A1,Oct 2007KSH130007AKSH13007ASwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls8 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted80 WattsTO-220

 0.91. Size:159K  wuxi china
3dd13007x1.pdf

13007
13007

NPN R 3DD13007 X1 3DD13007 NPN VCEO 400 V IC 8 A Ptot TC=25

 0.92. Size:337K  cn ween semi
phe13007.pdf

13007
13007

DISCRETE SEMICONDUCTORSDATA SHEETPHE13007Silicon Diffused Power TransistorProduct specification February 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTIONThe PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converte

 0.93. Size:254K  inchange semiconductor
mje13007a.pdf

13007
13007

isc Silicon NPN Power Transistor MJE13007ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 2.0(Max) @ I = 5.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 0.94. Size:149K  inchange semiconductor
je13007.pdf

13007
13007

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13007 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector

 0.95. Size:215K  inchange semiconductor
mjf13007.pdf

13007
13007

isc Silicon NPN Power Transistor MJF13007DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 2.0(Max) @ I = 5.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are pa

Datasheet: WPT2F42 , WPT2N41 , WPT2F06 , WPT2E33 , WPT2F30 , WPT2N32 , WPT2N31 , 13005 , BD135 , 13009 , 13001-0 , 13001-2 , 13001-A , 13003AD , 13003B , 13005A , 13005AD .

 

 
Back to Top