13003AD Datasheet. Specs and Replacement

Type Designator: 13003AD  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 2.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

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13003AD datasheet

 ..1. Size:116K  jdsemi

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13003AD

R 13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 ... See More ⇒

 0.1. Size:136K  utc

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13003AD

UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1... See More ⇒

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13003AD

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13003AD

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Detailed specifications: WPT2N32, WPT2N31, 13005, 13007, 13009, 13001-0, 13001-2, 13001-A, SS8050, 13003B, 13005A, 13005AD, 13005ADL, 13005D, 13005DL, 13005ED, 13005F

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