13009SDL Datasheet, Equivalent, Cross Reference Search

R13009SDL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

SBP13009-SSBP13009-SSBP13009-SSBP13009-SHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Para

SBW13009-SSBW13009-SSBW13009-SSBW13009-SHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage,High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Param

Order this documentMOTOROLAby MJE13009/DSEMICONDUCTOR TECHNICAL DATAMJE13009**Motorola Preferred DeviceDesigner's Data Sheet12 AMPERESWITCHMODE SeriesNPN SILICONPOWER TRANSISTOR

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITI

STW13009High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3Application21 Switch mode power suppliesTO-247DescriptionThe device is manufactured using high voltagemulti-epitaxial planar technology for highFigure 1

STWH13009High voltage fast-switching NPN power transistor.Features High voltage capability Low spread of dynamic parameters Very high switching speedApplications3 Switching mode power supplies21TO-247DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagramMulti Epitaxial Planar technology for high switching speed

STH13009High voltage fast-switching NPN power transistorPreliminary data.Features High voltage capability Low spread of dynamic parameters Very high switching speedApplications3 Switching mode power supplies21TO-220DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagramMulti Epitaxial Planar technology for high

MJE13009SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe MJE13009 is a multiepitaxial mesa NPNtransistor. It is mounted in Jedec TO-220 plasticpackage, intended for use in motor controls,switching regulators, deflection circuits, etc.321TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEO Collector-Em

ST13009High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3Applications21 Switch mode power suppliesTO-220DescriptionThe device is manufactured using high voltage multi-epitaxial planar technology for high Figure

October 2008FJA13009High Speed Switching Suitable for Switching Regulator and Motor Control High Voltage Switch Mode ApplicationsTO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings Units VCBO Collector-Base Voltage 700 V V Collector-Emitter Voltage 400 VCEO VEBO Emitter-Base Voltage 9 V IC Collec

March 2007FJP13009High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter

December 2007FJPF13009NPN Silicon TransistorHigh Voltage Switch Mode Application High Voltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply TO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collec

KSE13009F NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONTO-220F High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 12 A Collector Current (Pulse) IC 24

FJA13009High Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Co

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MJE13009GSWITCHMODEt SeriesNPN Silicon PowerTransistorsThe MJE13009G is designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They are http://onsemi.comparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulators, Inverters, Motor Controls,12 AMPERESolenoid/Relay drivers and Deflection circuits.NPN S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speedpower switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls,Sole

UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speedpower switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls,Sole

UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lig

TS13009 High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1

TS13009 High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1

SEMICONDUCTOR MJE13009FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 V

SEMICONDUCTOR MJE13009TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 V

3DD13009(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Contin

Spec. No. : HE200206HI-SINCERITYIssued Date : 2002.02.01Revised Date : 2006.07.04MICROELECTRONICS CORP.Page No. : 1/6HMJE13009A12 AMPERE NPN SILICON POWER TRANSISTORDescriptionThe HMJE13009A is designed for high-voltage, high-speed power switchinginductive circuits where fall time is critical. They are particularly suited for 115 and220V switch-controls, Solenoid/Relay dri

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009NPN MJE /MJE SERIES TRANSISTORS MJE13009NPN MJE

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13009K MAIN CHARACTERISTICS Package IC 12AVCEO 400VPC(TO-220C) 100WPC(TO-3PB) 120W APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply

MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220S NPN Silicon NPN transistor in a TO-220S Plastic Package. / Features High VCEO High IC. / Applications High frequency electronic lighting ballast applications. / Equ

MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13009W HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control ABSOLUTE MAXIMUM RATINGSTa=25 TO-263D2PAKTstgStorage Temperature -55~150TjJunction Temperature

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

R13009A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

RP13009A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FE

R13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEAT

RP13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

R13009T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

SJT13009NT SJT13009NT NPN SJT13009NT NPN SJT13009NT TO-220HW

SBP13009-KSBP13009-KSBP13009-KSBP13009-KHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter

SBW13009-KSBW13009-KSBW13009-KSBW13009-KHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage,High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Param

SBW13009-OSBW13009-OSBW13009-OSBW13009-OHigh voltage Fast Switching NPN Power TransistorFeatures Very High Switching Speed High voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Para

SBP13009-OSBP13009-OSBP13009-OSBP13009-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCC

WBP13009-KWBP13009-KWBP13009-KWBP13009-KHigh Voltage Fast- Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

SBF13009-OSBF13009-OSBF13009-OSBF13009-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

TRANSISTOR FHA13009A MAIN CHARACTERISTICS FEATURES IC 12A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 100W High reliability RoHS RoHS product APPLICATIONS Electronic ballasts High frequency sw

MJE13009Z9(3DD13009Z9) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25) 2.0 W CP (Tc=25) 100 W CT 150 j

MJE13009Z7(3DD13009Z7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25) 2.0 W CP (Tc=25) 100 W CT 150 j

KSH13009L SEMIHOW REV.A0,May 2003KSH13009LKSH13009LSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-3PCHARACTERISTICS SYMBOL RATING UNIT1. Base2. CollectorC

KSH13009AF KSH13009AFKSH13009AFSwitch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-220FCHARACTERISTICS SYMBOL RATING UNIT1. Base2. Collector

KSH13009A KSH13009AKSH13009ASwitch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-220CHARACTERISTICS SYMBOL RATING UNIT1. Base2. CollectorCo

KSH13009KSH13009 SEMIHOW REV.A1,Oct 2007KSH130009KSH13009Switch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-220

KSH13009FKSH13009F SEMIHOW REV.A1,Oct 2007KSH130009FKSH13009FSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-2

KSH13009AL SEMIHOW REV.A1,Oct 2007 KSH13009ALKSH13009AL Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 130 Watts TO-3P CHARACTERISTICS SYMBOL RATING UNIT 1. Base

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

WeEn Semiconductors Product data sheet Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M

3DD13009ANNPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supplyTO-3P Commonly power am

isc Silicon NPN Power Transistor 3DD13009KDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc Silicon NPN Power Transistor MJE13009FDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are

isc Silicon NPN Power Transistor 3DD13009NDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc Silicon NPN Power Transistor MJF13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

isc Silicon NPN Power Transistor FJP13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

isc Silicon NPN Power Transistor 3DD13009NLDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CSwitching Time: t = 0.7s(Max.)@ I = 8.0Af C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;con