13009SDL Datasheet. Specs and Replacement
Type Designator: 13009SDL 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220
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13009SDL datasheet
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
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SBW13009-K SBW13009-K SBW13009-K SBW13009-K High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage,High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Param... See More ⇒
SBW13009-O SBW13009-O SBW13009-O SBW13009-O High voltage Fast Switching NPN Power Transistor Features Very High Switching Speed High voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Para... See More ⇒
SBP13009-O SBP13009-O SBP13009-O SBP13009-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA B B B B C C C C... See More ⇒
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SBF13009-O SBF13009-O SBF13009-O SBF13009-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description G... See More ⇒
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KSH13009L SEMIHOW REV.A0,May 2003 KSH13009L KSH13009L Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-3P CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector C... See More ⇒
KSH13009AF KSH13009AF KSH13009AF Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector... See More ⇒
KSH13009A KSH13009A KSH13009A Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Co... See More ⇒
KSH13009 KSH13009 SEMIHOW REV.A1,Oct 2007 KSH130 009 KSH13009 Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-220 ... See More ⇒
KSH13009F KSH13009F SEMIHOW REV.A1,Oct 2007 KSH130 009F KSH13009F Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-2... See More ⇒
KSH13009AL SEMIHOW REV.A1,Oct 2007 KSH13009AL KSH13009AL Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 130 Watts TO-3P CHARACTERISTICS SYMBOL RATING UNIT 1. Base ... See More ⇒
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W ... See More ⇒
WeEn Semiconductors Product data sheet Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. M... See More ⇒
3DD13009AN NPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supply TO-3P Commonly power am... See More ⇒
isc Silicon NPN Power Transistor 3DD13009K DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
isc Silicon NPN Power Transistor MJE13009F DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are ... See More ⇒
isc Silicon NPN Power Transistor 3DD13009N DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
isc Silicon NPN Power Transistor MJF13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p... See More ⇒
isc Silicon NPN Power Transistor FJP13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;... See More ⇒
isc Silicon NPN Power Transistor 3DD13009NL DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Switching Time t = 0.7 s(Max.)@ I = 8.0A f C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig... See More ⇒
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;con... See More ⇒
Detailed specifications: 13005F, 13005S, 13005SD, 13005SDL, 13007DL, 13007S, 13007T, 13009A, NJW0281G, 13009T, 3866S, 3866SF, B647, B772P, B772PC, BU102D, BU102S
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