All Transistors. BU103AD Datasheet

 

BU103AD Datasheet and Replacement


   Type Designator: BU103AD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 650 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO92
 

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BU103AD Datasheet (PDF)

 ..1. Size:111K  jdsemi
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BU103AD

RBU103AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 8.1. Size:109K  jdsemi
 bu103a.pdf pdf_icon

BU103AD

RBU103A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222F

 8.2. Size:105K  jdsemi
 bu103ah.pdf pdf_icon

BU103AD

RBU103AH www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Charger and Switch-mode power supplies 222FEATURES 2 High voltage capa

 8.3. Size:207K  inchange semiconductor
 bu103a.pdf pdf_icon

BU103AD

isc Silicon NPN Power Transistor BU103ADESCRIPTIONContinuous Collector Current-I = 1ACCollector Power Dissipation-: P = 30W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 120 V

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History: NSS35200CF8T1G

Keywords - BU103AD transistor datasheet

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