BU103AD Specs and Replacement
Type Designator: BU103AD
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO92
BU103AD Substitution
- BJT ⓘ Cross-Reference Search
BU103AD datasheet
R BU103AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 ... See More ⇒
R BU103A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 F... See More ⇒
R BU103AH www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger and Switch-mode power supplies 2 2 2 FEATURES 2 High voltage capa... See More ⇒
isc Silicon NPN Power Transistor BU103A DESCRIPTION Continuous Collector Current-I = 1A C Collector Power Dissipation- P = 30W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 120 V ... See More ⇒
Detailed specifications: 13009T , 3866S , 3866SF , B647 , B772P , B772PC , BU102D , BU102S , 2SD669 , BU103AH , BU103BD , BU103BH , BU103DH , BU13003D , BU13003F , BU202ADL , BU202DL .
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