All Transistors. BU103AH Datasheet

 

BU103AH Datasheet and Replacement


   Type Designator: BU103AH
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO92
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BU103AH Datasheet (PDF)

 ..1. Size:105K  jdsemi
 bu103ah.pdf pdf_icon

BU103AH

RBU103AH www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Charger and Switch-mode power supplies 222FEATURES 2 High voltage capa

 8.1. Size:111K  jdsemi
 bu103ad.pdf pdf_icon

BU103AH

RBU103AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 8.2. Size:109K  jdsemi
 bu103a.pdf pdf_icon

BU103AH

RBU103A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222F

 8.3. Size:207K  inchange semiconductor
 bu103a.pdf pdf_icon

BU103AH

isc Silicon NPN Power Transistor BU103ADESCRIPTIONContinuous Collector Current-I = 1ACCollector Power Dissipation-: P = 30W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 120 V

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History: BC859W | AUY19-3 | KT8255A | AC138 | 2SD471 | 2SC4370AP | JA100

Keywords - BU103AH transistor datasheet

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