BU203DL Specs and Replacement

Type Designator: BU203DL

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO92

 BU203DL Substitution

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BU203DL datasheet

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BU203DL

R BU203DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Mainly used for 110V power Fluorescent Lamp Electronic Ballast etc 2 2 2 ... See More ⇒

Detailed specifications: BU103AH, BU103BD, BU103BH, BU103DH, BU13003D, BU13003F, BU202ADL, BU202DL, TIP32C, BU206DL, BU3150AF, BU3150BF, BU3150F, BU3150F-A, BU3150T, BU5027A, BU5027AF

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