BU5027S Specs and Replacement
Type Designator: BU5027S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220
BU5027S Substitution
- BJT ⓘ Cross-Reference Search
BU5027S datasheet
R BU5027S www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 Hi... See More ⇒
R BU5027AF www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 H... See More ⇒
R BU5027A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 Hi... See More ⇒
Detailed specifications: BU206DL , BU3150AF , BU3150BF , BU3150F , BU3150F-A , BU3150T , BU5027A , BU5027AF , BDT88 , BU6084B , BU6084BF , BU8403 , D667 , D880 , D882P , D882PC , DBU103T .
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