D880 Datasheet. Specs and Replacement
Type Designator: D880 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
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D880 datasheet
..1. Size:118K jdsemi
d880.pdf 
R D880 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger Emergency lamp and Electric toy control circuit 2 2 2 FEATURES 2 ... See More ⇒
0.1. Size:59K fairchild semi
ksd880.pdf
KSD880 Low Frequency Power Amplifier Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector ... See More ⇒
0.2. Size:176K onsemi
ksd880.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
0.3. Size:178K utc
2sd880.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834 ORDERING INFORMATION Ordering Number... See More ⇒
0.5. Size:300K cdil
csd880 gr y.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CSD880 TO-220 Audio Frequency Power Amplifier Applications. Complementary CSB834 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 60 V Emitter- Base Voltage VEBO 7.0 V Collector Curr... See More ⇒
0.6. Size:200K jiangsu
2sd880.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD880 TRANSISTOR (NPN) TO-220-3L FEATURES Low Frequency Power Amplifier 1. BASE 2. COLLECTOR Complement to 2SB834 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V ... See More ⇒
0.7. Size:258K lge
2sd880.pdf
2SD880(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collect... See More ⇒
0.8. Size:516K wietron
2sd880.pdf
2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 1 BASE 2 FEATURES 3 1 * Low frequency power amplifier 1. BASE 2. COLLECTOR * Complement to 2SB834 3. EMITTER 3 TO-220 EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Bas... See More ⇒
0.9. Size:664K jilin sino
2sd880.pdf
NPN NPN Epitaxial Silicon Transistor R 2SD880 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SB834 Complementary to 2SB834 RoHS RoHS product Package TO-220 TO-220C DPAK ORDER ME... See More ⇒
0.13. Size:210K first silicon
ftd880.pdf
SEMICONDUCTOR FTD880 TECHNICAL DATA FTD880 TRANSISTOR (NPN) A O FEATURES C F Low Frequency Power Amplifier E Complement to FTB834 B DIM MILLIMETERS A 10.15 0.15 B 15.30 MAX C 1.3+0.1/-0.15 P D 0.8 0.1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 3.8 0.2 F 2.7 0.2 J H 0.4 0.15 Symbol Parameter Value Unit D J 13.6 0.2 N 2.54 0.2 H N... See More ⇒
0.14. Size:404K feihonltd
d880c.pdf
MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 60V High switching speed PC 30W B834 Complementary to B834 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency... See More ⇒
0.15. Size:497K feihonltd
d880a.pdf
MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 60V High switching speed PC 30W B834 Complementary to B834 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency... See More ⇒
0.16. Size:129K pmc components
pmd880.pdf
PMD880 NPN SILICON TRIPLE DIFFSUED TRANSISTOR designed for audio frequency power amplifier applications. TO-220AB MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 7 V Collector Current IC 3 A Base Current IB 0.5 A Collector Power Dissipation Ta = 25 C Pc 1.5 W Colle... See More ⇒
0.18. Size:222K inchange semiconductor
2sd880.pdf
isc Silicon NPN Power Transistor 2SD880 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB834 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applicatio... See More ⇒
0.19. Size:209K inchange semiconductor
ksd880w.pdf
isc Silicon NPN Power Transistor KSD880W DESCRIPTION Complement to KSB834W 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base ... See More ⇒
0.20. Size:216K inchange semiconductor
ksd880.pdf
isc Silicon NPN Power Transistor KSD880 DESCRIPTION Collector-Emitter sustaining Voltage V =60V(Min) CEO Good Linearity of h FE Complement to KSB834 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
0.21. Size:209K inchange semiconductor
3dd880x.pdf
isc Silicon NPN Power Transistors 3DD880X DESCRIPTION X DC Current Gain -h = 55-75@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒
0.22. Size:212K inchange semiconductor
3dd880.pdf
isc Silicon NPN Power Transistors 3DD880 DESCRIPTION DC Current Gain -h = 60-300@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
Detailed specifications: BU3150T, BU5027A, BU5027AF, BU5027S, BU6084B, BU6084BF, BU8403, D667, 2SC5200, D882P, D882PC, DBU103T, DK52, DK52A, DK52D, DK53AD, DK53ADL
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