RD880 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

KSD880Low Frequency Power Amplifier Complement to KSB834TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 AIB Base Current 0.3 A PC Collector

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834 ORDERING INFORMATION Ordering Number

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CSD880TO-220Audio Frequency Power Amplifier Applications.Complementary CSB834ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 60 VEmitter- Base Voltage VEBO 7.0 VCollector Curr

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD880 TRANSISTOR (NPN) TO-220-3L FEATURES Low Frequency Power Amplifier 1. BASE 2. COLLECTOR Complement to 2SB834 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 60 V

2SD880(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 60 VVEBO Emitter-Base Voltage 7 V IC Collect

2SD880NPN Silicon Epitaxial Power TransistorP b Lead(Pb)-FreeCOLLECTOR2 1BASE2 FEATURES:31* Low frequency power amplifier 1. BASE2. COLLECTOR* Complement to 2SB834 3. EMITTER3TO-220EMITTERMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Bas

NPN NPN Epitaxial Silicon Transistor R2SD880 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SB834 Complementary to 2SB834 RoHS RoHS product Package TO-220 TO-220C DPAK ORDER ME

2SD880 Rev.H Oct.-2018 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , 2SB834 High DC current gain, low saturation voltage, high power dissipation, complementary to 2SB834. / Applications

N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD880 APPLICATIONS Low Frequency Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HED880 APPLICATIONS Low Frequency Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220AB TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

SEMICONDUCTORFTD880TECHNICAL DATA FTD880 TRANSISTOR (NPN) AO FEATURES CF Low Frequency Power Amplifier E Complement to FTB834 BDIM MILLIMETERSA 10.15 0.15 B 15.30 MAXC 1.3+0.1/-0.15PD 0.8 0.1MAXIMUM RATINGS (Ta=25 unless otherwise noted)E 3.8 0.2F 2.7 0.2JH 0.4 0.15Symbol Parameter Value Unit DJ 13.6 0.2N 2.54 0.2HN

MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 60V High switching speed PC 30W B834 Complementary to B834 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency

MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 60V High switching speed PC 30W B834 Complementary to B834 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency

PMD880 NPN SILICON TRIPLE DIFFSUED TRANSISTOR designed for audio frequency power amplifier applications. TO-220AB MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 60 VEmitter Base Voltage VEBO 7 VCollector Current IC 3 ABase Current IB 0.5 ACollector Power Dissipation Ta = 25 C Pc 1.5 WColle

2SD880NPN-TRANSISTORNPN, 3A, 60V NPN /CLASSIFICATION OF hFE Rank O Y GR 2SB834Range 60-120 100-200 150-300 TO-220C

isc Silicon NPN Power Transistor 2SD880DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB834Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifierapplicatio

isc Silicon NPN Power Transistor KSD880WDESCRIPTIONComplement to KSB834W100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base

isc Silicon NPN Power Transistor KSD880DESCRIPTIONCollector-Emitter sustaining Voltage: V =60V(Min)CEOGood Linearity of hFEComplement to KSB834Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLinear and switching industrial applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistors 3DD880XDESCRIPTIONX: DC Current Gain -h = 55-75@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Power Transistors 3DD880DESCRIPTIONDC Current Gain -h = 60-300@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR