DK52D Specs and Replacement
Type Designator: DK52D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO251
DK52D Substitution
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DK52D datasheet
R DK52D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 FE... See More ⇒
Detailed specifications: BU8403 , D667 , D880 , D882P , D882PC , DBU103T , DK52 , DK52A , 2N5401 , DK53AD , DK53ADL , DK53D , DK53DL , DK53H , DK53TD , DK54DL , DK55A .
History: 2SD1185 | 2SC4963 | 2SC3280R
Keywords - DK52D pdf specs
DK52D cross reference
DK52D equivalent finder
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History: 2SD1185 | 2SC4963 | 2SC3280R
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