DK53AD Specs and Replacement
Type Designator: DK53AD
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 28 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 2.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO251
DK53AD Substitution
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DK53AD datasheet
R DK53AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 F... See More ⇒
R DK53ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Mainly used for 110V power Fluorescent Lamp Electronic Ballast etc 2 2 2 ... See More ⇒
Detailed specifications: D667 , D880 , D882P , D882PC , DBU103T , DK52 , DK52A , DK52D , 2N3055 , DK53ADL , DK53D , DK53DL , DK53H , DK53TD , DK54DL , DK55A , DK55ED .
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