DK54DL Datasheet. Specs and Replacement
Type Designator: DK54DL 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO251
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DK54DL Substitution
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DK54DL datasheet
R DK54DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Mainly used for 110V power Fluorescent Lamp Electronic Ballast etc 2 2 2 F... See More ⇒
Detailed specifications: DK52A, DK52D, DK53AD, DK53ADL, DK53D, DK53DL, DK53H, DK53TD, BC557, DK55A, DK55ED, DK55SD, E13005SDL, H13003, H13003AD, H13003ADL, H13003AH
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