DK55SD Datasheet, Equivalent, Cross Reference Search
Type Designator: DK55SD
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 43 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO252 TO251
DK55SD Transistor Equivalent Substitute - Cross-Reference Search
DK55SD Datasheet (PDF)
..1. Size:118K jdsemi
dk55sd.pdf
dk55sd.pdf
RDK55SD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast 2and Switch-mode power supplies 122
..2. Size:117K jdsemi
dk55sd 2.pdf
dk55sd 2.pdf
RDK55SD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222F
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
