DK55SD PDF and Equivalents Search

 

DK55SD Specs and Replacement

Type Designator: DK55SD

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 43 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO252 TO251

 DK55SD Substitution

- BJT ⓘ Cross-Reference Search

 

DK55SD datasheet

 ..1. Size:118K  jdsemi

 dk55sd.pdf pdf_icon

DK55SD

R DK55SD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast 2 and Switch-mode power supplies 1 2 2 ... See More ⇒

 ..2. Size:117K  jdsemi

 dk55sd 2.pdf pdf_icon

DK55SD

R DK55SD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 F... See More ⇒

Detailed specifications: DK53ADL , DK53D , DK53DL , DK53H , DK53TD , DK54DL , DK55A , DK55ED , 13007 , E13005SDL , H13003 , H13003AD , H13003ADL , H13003AH , H13003D , H13003DL , H13003H .

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