2N6533 Datasheet and Replacement
Type Designator: 2N6533
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 26 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO66
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2N6533 Datasheet (PDF)
2n6533.pdf

Product Specification www.jmnic.com Silicon Power Transistors 2N6533 DESCRIPTION DARLINGTON With TO-220 package APPLICATIONS Power switching Hammer drivers Series and shunt regulators Audio amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 emitterFig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(
2n6535.pdf

2N6535Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 100V IC = 8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n6537.pdf

2N6537Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 120V IC = 8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
Datasheet: 2N6527 , 2N6528 , 2N6529 , 2N652A , 2N653 , 2N6530 , 2N6531 , 2N6532 , 13009 , 2N6534 , 2N6535 , 2N6536 , 2N6537 , 2N6538 , 2N6539 , 2N654 , 2N6540 .
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