3DD13012_A8 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD13012_A8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 750 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220AB
3DD13012_A8 Transistor Equivalent Substitute - Cross-Reference Search
3DD13012_A8 Datasheet (PDF)
..1. Size:155K crhj
3dd13012 a8.pdf
3dd13012 a8.pdf
NPN R 3DD13012 A8 3DD13012 A8 NPN VCEO 400 V IC 15 A Ptot TC=25 100 W
4.1. Size:161K crhj
3dd13012 an.pdf
3dd13012 an.pdf
NPN R 3DD13012 AN 3DD13012 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W
6.1. Size:160K crhj
3dd13012an.pdf
3dd13012an.pdf
NPN R 3DD13012 AN 3DD13012 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W
6.2. Size:155K crhj
3dd13012a8.pdf
3dd13012a8.pdf
NPN R 3DD13012 A8 3DD13012 A8 NPN VCEO 400 V IC 15 A Ptot TC=25 100 W
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
