3DD3015_A1 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD3015_A1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
3DD3015_A1 Transistor Equivalent Substitute - Cross-Reference Search
3DD3015_A1 Datasheet (PDF)
..1. Size:178K crhj
3dd3015 a1.pdf
3dd3015 a1.pdf
NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W
5.1. Size:146K crhj
3dd3015 a3.pdf
3dd3015 a3.pdf
NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W
7.1. Size:178K crhj
3dd3015a1.pdf
3dd3015a1.pdf
NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W
7.2. Size:146K crhj
3dd3015a3.pdf
3dd3015a3.pdf
NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
