3DD4515_A6 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD4515_A6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO126
3DD4515_A6 Transistor Equivalent Substitute - Cross-Reference Search
3DD4515_A6 Datasheet (PDF)
3dd4515 a6.pdf
NPN R 3DD4515 A6 3DD4515 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
3dd4515 a1.pdf
NPN R 3DD4515 A1 3DD4515 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
3dd4515.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4515 MAIN CHARACTERISTICS Package I 15A CV 400V CEOP (TO-3PN(B)/TO-247) 120W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power
3dd4515a23.pdf
R NPN 3DD4515 A23 3DD4515 A23 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
3dd4515a1.pdf
NPN R 3DD4515 A1 3DD4515 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
3dd4515a6.pdf
NPN R 3DD4515 A6 3DD4515 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
3dd4515.pdf
isc Silicon NPN Power Transistor 3DD4515DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.0V(Max) @I =10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,high speed switching andregulated power supply applications.ABS
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2N2364A
