3DD4550_A4 Datasheet and Replacement
Type Designator: 3DD4550_A4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 1050
V
Maximum Collector-Emitter Voltage |Vce|: 450
V
Maximum Emitter-Base Voltage |Veb|: 18
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 48
Noise Figure, dB: -
Package:
TO252
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3DD4550_A4 Datasheet (PDF)
..1. Size:159K crhj
3dd4550 a4.pdf 

NPN R 3DD4550 A4 3DD4550 A4 NPN VCEO 450 V IC 5 A Ptot W TC=25 40
7.1. Size:159K crhj
3dd4550a4.pdf 

NPN R 3DD4550 A4 3DD4550 A4 NPN VCEO 450 V IC 5 A Ptot W TC=25 40
9.1. Size:647K jilin sino
3dd4515.pdf 

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4515 MAIN CHARACTERISTICS Package I 15A CV 400V CEOP (TO-3PN(B)/TO-247) 120W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power
9.2. Size:177K crhj
3dd4515 a1.pdf 

NPN R 3DD4515 A1 3DD4515 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
9.3. Size:147K crhj
3dd4520 a6.pdf 

NPN R 3DD4520 A6 3DD4520 A6 NPN VCEO 450 V IC 2 A Ptot Tc=25 50 W
9.4. Size:147K crhj
3dd4540a3.pdf 

NPN R 3DD4540 A3 3DD4540 A3 NPN VCEO 450 V IC 4 A Ptot TC=25 40 W
9.5. Size:177K crhj
3dd4513a1d.pdf 

NPN R 3DD4513 A1D 3DD4513 A1D NPN VCEO 450 V IC 1.3 A Ptot Ta=25 0.8 W
9.6. Size:194K crhj
3dd4530 a1-h.pdf 

NPN R 3DD4530 A1-H 3DD4530 A1-H NPN VCEO 400 V IC 3 A Ptot Ta=25 0.8 W
9.7. Size:171K crhj
3dd4515a23.pdf 

R NPN 3DD4515 A23 3DD4515 A23 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
9.8. Size:177K crhj
3dd4515a1.pdf 

NPN R 3DD4515 A1 3DD4515 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
9.9. Size:152K crhj
3dd4518 a6d.pdf 

NPN R 3DD4518 A6D ` 3DD4518 A6D VCEO 450 V NPN IC 1.8 A Ptot TC=25 50 W
9.10. Size:150K crhj
3dd4515 a6.pdf 

NPN R 3DD4515 A6 3DD4515 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
9.11. Size:158K crhj
3dd4520a4.pdf 

NPN R 3DD4520 A4 3DD4520 A4 NPN VCEO 450 V IC 2 A Ptot Tc=25 35 W
9.12. Size:151K crhj
3dd4540a7.pdf 

NPN R 3DD4540 A7 3DD4540 A7 NPN VCEO 450 V IC 4 A Ptot TC=25 50 W
9.13. Size:150K crhj
3dd4540a9.pdf 

NPN R 3DD4540 A9 3DD4540 A9 NPN VCEO 450 V IC 4 A Ptot TC=25 75 W
9.14. Size:151K crhj
3dd4540 a7.pdf 

NPN R 3DD4540 A7 3DD4540 A7 NPN VCEO 450 V IC 4 A Ptot TC=25 50 W
9.15. Size:187K crhj
3dd4518a1d.pdf 

NPN R 3DD4518 A1D 3DD4518 A1D-H VCEO 450 V NPN IC 1.8 A Ptot Ta=25 0.8 W
9.16. Size:178K crhj
3dd4513 a1d.pdf 

NPN R 3DD4513 A1D 3DD4513 A1D NPN VCEO 450 V IC 1.3 A Ptot Ta=25 0.8 W
9.17. Size:147K crhj
3dd4540 a3.pdf 

NPN R 3DD4540 A3 3DD4540 A3 NPN VCEO 450 V IC 4 A Ptot TC=25 40 W
9.18. Size:147K crhj
3dd4520a6.pdf 

NPN R 3DD4520 A6 3DD4520 A6 NPN VCEO 450 V IC 2 A Ptot Tc=25 50 W
9.19. Size:150K crhj
3dd4515a6.pdf 

NPN R 3DD4515 A6 3DD4515 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
9.20. Size:152K crhj
3dd4518a6d.pdf 

NPN R 3DD4518 A6D ` 3DD4518 A6D VCEO 450 V NPN IC 1.8 A Ptot TC=25 50 W
9.21. Size:145K crhj
3dd4518a3d.pdf 

NPN R 3DD4518 A3D 3DD4518 A3D VCEO 450 V NPN IC 1.8 A Ptot Tc=25 35 W
9.22. Size:148K crhj
3dd4513a6d.pdf 

NPN R 3DD4513 A6D ` 3DD4513 A6D VCEO 450 V NPN IC 1.3 A Ptot TC=25 40 W
9.23. Size:146K crhj
3dd4520 a3.pdf 

NPN R 3DD4520 A3 3DD4520 A3 NPN VCEO 450 V IC 2 A Ptot Tc=25 35 W
9.24. Size:149K crhj
3dd4513 a6d.pdf 

NPN R 3DD4513 A6D ` 3DD4513 A6D VCEO 450 V NPN IC 1.3 A Ptot TC=25 40 W
9.25. Size:159K crhj
3dd4520 a4.pdf 

NPN R 3DD4520 A4 3DD4520 A4 NPN VCEO 450 V IC 2 A Ptot Tc=25 35 W
9.26. Size:145K crhj
3dd4518 a3d.pdf 

NPN R 3DD4518 A3D 3DD4518 A3D VCEO 450 V NPN IC 1.8 A Ptot Tc=25 35 W
9.27. Size:187K crhj
3dd4518 a1d.pdf 

NPN R 3DD4518 A1D 3DD4518 A1D-H VCEO 450 V NPN IC 1.8 A Ptot Ta=25 0.8 W
9.28. Size:147K crhj
3dd4520a3.pdf 

NPN R 3DD4520 A3 3DD4520 A3 NPN VCEO 450 V IC 2 A Ptot Tc=25 35 W
9.29. Size:150K crhj
3dd4540 a9.pdf 

NPN R 3DD4540 A9 3DD4540 A9 NPN VCEO 450 V IC 4 A Ptot TC=25 75 W
9.30. Size:214K inchange semiconductor
3dd4515.pdf 

isc Silicon NPN Power Transistor 3DD4515DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.0V(Max) @I =10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,high speed switching andregulated power supply applications.ABS
Datasheet: 2SA1179M4
, 2SA1179M5
, 2SA1179M6
, 2SA1179M7
, 2SA118
, 2SA1180
, 2SA1180A
, 2SA1182
, 2N5401
, 2SA1182Y
, 2SA1183
, 2SA1184
, 2SA1185
, 2SA1186
, 2SA1186O
, 2SA1186P
, 2SA1186Y
.
History: 2SD1007HR
| ED1602D
| DRC9143X
| FCX555
| KT208I
| BDY12B
| SFE245
Keywords - 3DD4550_A4 transistor datasheet
3DD4550_A4 cross reference
3DD4550_A4 equivalent finder
3DD4550_A4 lookup
3DD4550_A4 substitution
3DD4550_A4 replacement