3DD6012_A6 Datasheet. Specs and Replacement

Type Designator: 3DD6012_A6  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 900 V

Maximum Collector-Emitter Voltage |Vce|: 530 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO126

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3DD6012_A6 datasheet

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3DD6012_A6

3DD59/3DD60 NPN A B C D E F PCM TC=75 25 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=5mA 30 50 80 110 150 200 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA ... See More ⇒

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Detailed specifications: 3DD4520_A3, 3DD4520_A4, 3DD4520_A6, 3DD4530_A1-H, 3DD4540_A3, 3DD4540_A7, 3DD4540_A9, 3DD4550_A4, 2SC2625, 3DD6012_A1, 3DD741_A8, 3DG2482H_A1, 3DG2482S, 3DG3001_A1-H, 3DG40005AS-H, 3DG44, BU406_A8

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