All Transistors. 3DD6012_A6 Datasheet

 

3DD6012_A6 Datasheet and Replacement


   Type Designator: 3DD6012_A6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 530 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO126
 

 3DD6012_A6 Substitution

   - BJT ⓘ Cross-Reference Search

   

3DD6012_A6 Datasheet (PDF)

 ..1. Size:149K  crhj
3dd6012 a6.pdf pdf_icon

3DD6012_A6

NPN R 3DD6012 A6 3DD6012 A6 NPN VCEO 530 V IC 1.5 A Ptot W TC=25 50

 5.1. Size:194K  crhj
3dd6012 a1.pdf pdf_icon

3DD6012_A6

NPN R 3DD6012 A1 3DD6012 A1 NPN VCEO 530 V IC 1.5 A Ptot Ta=25 0.8 W

 7.1. Size:149K  crhj
3dd6012a6.pdf pdf_icon

3DD6012_A6

NPN R 3DD6012 A6 3DD6012 A6 NPN VCEO 530 V IC 1.5 A Ptot W TC=25 50

 9.1. Size:151K  china
3dd60.pdf pdf_icon

3DD6012_A6

3DD59/3DD60 NPN A B C D E F PCM TC=75 25 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=5mA 30 50 80 110 150 200 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA

Datasheet: 3DD4520_A3 , 3DD4520_A4 , 3DD4520_A6 , 3DD4530_A1-H , 3DD4540_A3 , 3DD4540_A7 , 3DD4540_A9 , 3DD4550_A4 , 2SC2625 , 3DD6012_A1 , 3DD741_A8 , 3DG2482H_A1 , 3DG2482S , 3DG3001_A1-H , 3DG40005AS-H , 3DG44 , BU406_A8 .

Keywords - 3DD6012_A6 transistor datasheet

 3DD6012_A6 cross reference
 3DD6012_A6 equivalent finder
 3DD6012_A6 lookup
 3DD6012_A6 substitution
 3DD6012_A6 replacement

 

 
Back to Top

 


 
.