BFP740 Datasheet. Specs and Replacement

Type Designator: BFP740  📄📄 

SMD Transistor Code: R7s

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.16 W

Maximum Collector-Base Voltage |Vcb|: 13 V

Maximum Collector-Emitter Voltage |Vce|: 4 V

Maximum Emitter-Base Voltage |Veb|: 1.2 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 42000 MHz

Collector Capacitance (Cc): 0.08 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT343

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BFP740 datasheet

 ..1. Size:658K  infineon

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BFP740

BFP740 SiGe C NPN RF bipolar transistor Product description The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial applications according to the relevant tests ... See More ⇒

 ..2. Size:1761K  kexin

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BFP740

SMD Type Transistors NPN Transistors BFP740 (KFP740) Uint mm SOT-343 0.9 0.1 0.2 2 Features 0.1 MAX. 1.3 0.1 High gain ultra low noise RF transistor A 4 3 High maximum stable gain Gold metallization for extra high reliability 0.15 150 GHz fT-Silicon Germanium technology 1 2 +0.1 +0.1 Outstanding noise figure F = 0.5 dB at 1.8 GHz 0.3 0.15 ... See More ⇒

 0.1. Size:1510K  infineon

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BFP740

BFP740F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2015-03-12 RF & Protection Devices Edition 2015-03-12 Published by Infineon Technologies AG 81726 Munich, Germany 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristi... See More ⇒

 0.2. Size:627K  infineon

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BFP740

BFP740FESD SiGe C NPN RF bipolar transistor Product description The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB... See More ⇒

Detailed specifications: DTB123E, DTB123YCA, DTB123YKA, DTC113ZM, DTC123YM, DTC643TK, DTD123YUA, BFG67R, MPSA42, FC4227, 2SA1413-Z, 2SA1871, 2SC3632-Z, 2SC4505, 2SC4976, 3DD13002, 3DD13002A

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