2N6552 Datasheet. Specs and Replacement

Type Designator: 2N6552  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO202

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2N6552 datasheet

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2N6552

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

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2N6552

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2N6552

Xiamen Silicon-top opto electronics Co.,Ltd. Y2N 655S 60V 10A N-Channel MOSFET Power MOSFET (2 IN 1) General Features Proprietary New Trench Technology Ultra-low Miller Charge RDS(ON),typ.=43m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Con... See More ⇒

Detailed specifications: 2N6544, 2N6545, 2N6546, 2N6547, 2N6548, 2N6549, 2N655, 2N6551, BD335, 2N6553, 2N6554, 2N6555, 2N6556, 2N6557, 2N6558, 2N6559, 2N656

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