All Transistors. TP9380 Datasheet

 

TP9380 Datasheet and Replacement


   Type Designator: TP9380
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 140 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 108 MHz
   Collector Capacitance (Cc): 85 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: 500-4L-FLG
 

 TP9380 Substitution

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TP9380 Datasheet (PDF)

 ..1. Size:14K  advanced-semi
 tp9380.pdf pdf_icon

TP9380

TP9380 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for PACKAGE STYLE .500 4L FLG Class C, FM Broadcast Applications up to 108 MHz. .112x45 LAC .125 NOM.E FULL RFEATURES:C Class C Operation B PG = 10 dB at 75 W/108 MHz BE Omnigold Metalization System E D F G HKJIMAXIMUM RATINGS MINIMUM MAXIMUM

 9.1. Size:247K  hgsemi
 tp9383.pdf pdf_icon

TP9380

HG RF POWER TRANSISTORTP9383SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE 500 4L FLGThe HG TP9383 is a CommonEmitter Device Designed for FMBroadcast Transmitter Applications inthe 88 to 108 MHz Band.FEATURES INCLUDE:High Efficiency.. Gold Metallization. Emitter BallastingMAXIMUM RATINGSIC 16 AVCBO 60 VPDISS 230 W

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - TP9380 transistor datasheet

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