TPV375 Datasheet. Specs and Replacement

Type Designator: TPV375  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 140 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 225 MHz

Collector Capacitance (Cc): 85 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 500-4L-STUD

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TPV375 datasheet

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TPV375

TPV375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The TPV375 is a Common Emitter PACKAGE STYLE .500 4L STUD Device Designed for Class A Television Band III Applications. FEATURES INCLUDE Gold Metalization Emitter Ballasting MAXIMUM RATINGS IC 8 A VCB 65 V PDISS 140 W @ TC = 25 OC TJ -65 OC to +200 OC 1 = COLLECTOR 2 & 4 = EMITTER TSTG -65 OC to +150 OC 3 = BASE 1.5... See More ⇒

Detailed specifications: SBT5853PT2G, ZX5T150, ZX5T250, ZXTP2013, SD1441, SD1477, SD1538-8, TP9380, BD136, 2N2221AUA, 2N2221AUB, 2N22221AL, 2N2222AL, 2N2222AUA, 2N3418S, 2N3419S, 2N3420S

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