TPV375 Datasheet and Replacement
Type Designator: TPV375
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 225 MHz
Collector Capacitance (Cc): 85 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: 500-4L-STUD
TPV375 Transistor Equivalent Substitute - Cross-Reference Search
TPV375 Datasheet (PDF)
tpv375.pdf
TPV375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The TPV375 is a Common Emitter PACKAGE STYLE .500 4L STUD Device Designed for Class A Television Band III Applications. FEATURES INCLUDE Gold Metalization Emitter Ballasting MAXIMUM RATINGS IC 8 A VCB 65 V PDISS 140 W @ TC = 25 OC TJ -65 OC to +200 OC 1 = COLLECTOR 2 & 4 = EMITTER TSTG -65 OC to +150 OC 3 = BASE 1.5... See More ⇒
Datasheet: SBT5853PT2G , ZX5T150 , ZX5T250 , ZXTP2013 , SD1441 , SD1477 , SD1538-8 , TP9380 , BD136 , 2N2221AUA , 2N2221AUB , 2N22221AL , 2N2222AL , 2N2222AUA , 2N3418S , 2N3419S , 2N3420S .
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