All Transistors. 2N5153L Datasheet

 

2N5153L Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5153L

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5.5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO5

2N5153L Transistor Equivalent Substitute - Cross-Reference Search

 

2N5153L Datasheet (PDF)

0.1. 2n5151 2n5151l 2n5153 2n5153l.pdf Size:229K _aeroflex

2N5153L
2N5153L

PNP Power Silicon Transistor2N5151, 2N5151L & 2N5153, 2N5153LFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/545 TO-5 Package: 2N5151L, 2N5153LTO-39 (TO-205AD) Package: 2N5151, 2N5153Maximum Ratings (TC = +25C unless otherwise noted)Ratings Symbol Value UnitsCollector - Emitter Voltage VCEO 80 VdcCollector - Base V

8.1. 2n5153hr.pdf Size:577K _st

2N5153L
2N5153L

2N5153HRHi-Rel PNP bipolar transistor 80 V, 5 ADatasheet - production dataFeatures132Parameter ValueTO-257 VCEO 80 VTO-39 IC (max.) 5 A2hFE at 10 V -150 mA > 7013Operating temperature -65 C to +200 CrangeSMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristicsFigure 1. Internal schematic diagram ESCC qualified European preferr

8.2. 2n5151 2n5152 2n5153 2n5154.pdf Size:78K _central

2N5153L

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.3. 2n5153smd05.pdf Size:27K _semelab

2N5153L
2N5153L

2N5151SMD052N5153SMD05MECHANICAL DATAPNP BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5151SMD05 and the 2N5153SMD05 aresilicon expitaxial planar PNP transistors in aCeramic S

8.4. 2n5151 2n5153.pdf Size:20K _semelab

2N5153L
2N5153L

2N51512N5153MECHANICAL DATAHIGH SPEED Dimensions in mm (inches)8.89 (0.35)9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305)8.51 (0.335)SWITCHES4.19 (0.165)4.95 (0.195)DESCRIPTION0.89max.(0.035)12.70The 2N5151 and the 2N5153 are silicon(0.500)7.75 (0.305)min.8.51 (0.335)expitaxial planar PNP transistors india.jedec TO-39 metal case intended foruse in switc

 8.5. 2n5153smd.pdf Size:10K _semelab

2N5153L

2N5153SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

8.6. 2n5153u3.pdf Size:184K _microsemi

2N5153L
2N5153L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153JANTX 2N5151L 2N5153LJANTXV 2N5151U3 2N5153U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Te

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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