WT5611 Specs and Replacement
Type Designator: WT5611
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1250 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 250 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 6.5
Package: DISK55
WT5611 Substitution
- BJT ⓘ Cross-Reference Search
WT5611 datasheet
Detailed specifications: 2N3419S, 2N3420S, 2N3421S, 2N5151L, 2N5152L, 2N5153L, 2N5154L, 2N6193U3, C945, WT5650, WT5651, WT5652, 13003, 13003A, 13003C, 13003D, 13003E
Keywords - WT5611 pdf specs
WT5611 cross reference
WT5611 equivalent finder
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