All Transistors. 3CA1011 Datasheet

 

3CA1011 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3CA1011
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220

 3CA1011 Transistor Equivalent Substitute - Cross-Reference Search

   

3CA1011 Datasheet (PDF)

 ..1. Size:186K  lzg
2sa1011 3ca1011.pdf

3CA1011
3CA1011

2SA1011(3CA1011) PNP /SILICON PNP TRANSISTOR :100W Purpose: High voltage switching, AF power amplifier, 100W output predriver applications. : 2SC2344(3DA2344) Features: complementary pair with 2SC2344(3DA2344). /Absolute maximum ratings(Ta=25)

 8.1. Size:226K  lzg
2sa1012 3ca1012.pdf

3CA1011
3CA1011

2SA1012(3CA1012) PNP /SILICON PNP TRANSISTOR : Purpose: High current switching applications. ,, 2SC2562(3DA2562) Features: Low collector saturation voltage, high speed switching time, complementary to 2SC2562(3DA2562). /Absolute maximum ratings(Ta=25)

 9.1. Size:109K  china
3ca1072.pdf

3CA1011

3CA1072 PNP PCM Ta=25 120 W IC 12 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.05m 120 V A V(BR)CEO ICE=1mA 120 V V(BR)EBO IEB=0.05mA 7 V ICBO VCB=120V 50 A IEBO VEB=7V 50 A ICEO VEB=120V 1.0 A IC=7.5A VCEsat 1.8 IB=1.5A V

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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